Abstract

We report on experimental and theoretical studies of high field transport in bulk GaN. Theoretically, we have investigated the electron-phonon interaction in this material based on empirical pseudopotential method (EPM) calculations for the bandstructure, together with an empirical valence shell model for the lattice dynamics in cubic GaN. The rigid-ion model is used to calculate the electron-phonon scattering rate for all modes, and to extract a deformation potential for use in high field transport calculations. A full band Monte-Carlo (FBMC) method is used to simulate high field transport in GaN. In the experimental studies, we have fabricated etched constrictions for performing pulse I-V measurements in bulk GaN and GaN/AlGaN heterostructures. The experimentally extracted velocity-field characteristics are in good agreement with transport calculations up to fields as high as 1.5 × 105 V/cm, where velocities up to 2.5 × 107 cm/s are measured.

Original languageEnglish (US)
Pages (from-to)263-270
Number of pages8
JournalPhysica Status Solidi (A) Applied Research
Volume190
Issue number1
DOIs
StatePublished - Mar 2002

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Electron-phonon interactions
Phonon scattering
Electron scattering
Lattice vibrations
electron phonon interactions
pseudopotentials
Monte Carlo method
Heterojunctions
constrictions
Monte Carlo methods
velocity distribution
Ions
valence
pulses
scattering
ions
electrons
aluminum gallium nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

High field transport studies of GaN. / Barker, J. M.; Akis, R.; Thornton, Trevor; Ferry, D. K.; Goodnick, Stephen.

In: Physica Status Solidi (A) Applied Research, Vol. 190, No. 1, 03.2002, p. 263-270.

Research output: Contribution to journalArticle

Barker, J. M. ; Akis, R. ; Thornton, Trevor ; Ferry, D. K. ; Goodnick, Stephen. / High field transport studies of GaN. In: Physica Status Solidi (A) Applied Research. 2002 ; Vol. 190, No. 1. pp. 263-270.
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