High-field transport in wide-band-gap semiconductors

D. K. Ferry

Research output: Contribution to journalArticle

231 Citations (Scopus)

Abstract

The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above 107 cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2×107 cm/sec.

Original languageEnglish (US)
Pages (from-to)2361-2369
Number of pages9
JournalPhysical Review B
Volume12
Issue number6
DOIs
StatePublished - 1975
Externally publishedYes

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broadband
Diamond
Diamonds
diamonds
Electric fields
electric fields
Wide band gap semiconductors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High-field transport in wide-band-gap semiconductors. / Ferry, D. K.

In: Physical Review B, Vol. 12, No. 6, 1975, p. 2361-2369.

Research output: Contribution to journalArticle

Ferry, D. K. / High-field transport in wide-band-gap semiconductors. In: Physical Review B. 1975 ; Vol. 12, No. 6. pp. 2361-2369.
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