Abstract
The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above 107 cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2×107 cm/sec.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2361-2369 |
| Number of pages | 9 |
| Journal | Physical Review B |
| Volume | 12 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jan 1 1975 |
ASJC Scopus subject areas
- Condensed Matter Physics