High-field transport in wide-band-gap semiconductors

D. K. Ferry

Research output: Contribution to journalArticlepeer-review

243 Scopus citations


The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above 107 cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2×107 cm/sec.

Original languageEnglish (US)
Pages (from-to)2361-2369
Number of pages9
JournalPhysical Review B
Issue number6
StatePublished - Jan 1 1975

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'High-field transport in wide-band-gap semiconductors'. Together they form a unique fingerprint.

Cite this