High-field transport in wide-band-gap semiconductors

D. K. Ferry

Research output: Contribution to journalArticle

234 Scopus citations

Abstract

The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above 107 cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2×107 cm/sec.

Original languageEnglish (US)
Pages (from-to)2361-2369
Number of pages9
JournalPhysical Review B
Volume12
Issue number6
DOIs
StatePublished - Jan 1 1975

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ASJC Scopus subject areas

  • Condensed Matter Physics

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