Abstract

The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.

Original languageEnglish (US)
Pages (from-to)2045-2050
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - Jul 2004

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Phonons
Heterojunctions
phonons
life (durability)
inhomogeneity
velocity distribution

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

High field transport in GaN/AlGaN heterostructures. / Barker, J. M.; Ferry, D. K.; Goodnick, Stephen; Koleske, D. D.; Allerman, A.; Shul, R. J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 4, 07.2004, p. 2045-2050.

Research output: Contribution to journalArticle

Barker, J. M. ; Ferry, D. K. ; Goodnick, Stephen ; Koleske, D. D. ; Allerman, A. ; Shul, R. J. / High field transport in GaN/AlGaN heterostructures. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2004 ; Vol. 22, No. 4. pp. 2045-2050.
@article{754629d9e6144aceb533ec21aa37bc35,
title = "High field transport in GaN/AlGaN heterostructures",
abstract = "The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.",
author = "Barker, {J. M.} and Ferry, {D. K.} and Stephen Goodnick and Koleske, {D. D.} and A. Allerman and Shul, {R. J.}",
year = "2004",
month = "7",
doi = "10.1116/1.1775199",
language = "English (US)",
volume = "22",
pages = "2045--2050",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - High field transport in GaN/AlGaN heterostructures

AU - Barker, J. M.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Koleske, D. D.

AU - Allerman, A.

AU - Shul, R. J.

PY - 2004/7

Y1 - 2004/7

N2 - The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.

AB - The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.

UR - http://www.scopus.com/inward/record.url?scp=4944228367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944228367&partnerID=8YFLogxK

U2 - 10.1116/1.1775199

DO - 10.1116/1.1775199

M3 - Article

VL - 22

SP - 2045

EP - 2050

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -