Abstract

The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.

Original languageEnglish (US)
Pages (from-to)2045-2050
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - Jul 1 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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