High field transport in GaN/AlGaN heterostructures

J. M. Barker; D. K. Ferry; Stephen Goodnick; D. D. Koleske; A. Allerman; R. J. Shul

doi:10.1116/1.1775199

High field transport in GaN/AlGaN heterostructures

J. M. Barker, D. K. Ferry, Stephen Goodnick, D. D. Koleske, A. Allerman, R. J. Shul

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.

Original language	English (US)
Pages (from-to)	2045-2050
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1775199
State	Published - Jul 2004

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1775199

Cite this

@article{754629d9e6144aceb533ec21aa37bc35,

title = "High field transport in GaN/AlGaN heterostructures",

abstract = "The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.",

author = "Barker, {J. M.} and Ferry, {D. K.} and Stephen Goodnick and Koleske, {D. D.} and A. Allerman and Shul, {R. J.}",

year = "2004",

month = jul,

doi = "10.1116/1.1775199",

language = "English (US)",

volume = "22",

pages = "2045--2050",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

}

TY - JOUR

T1 - High field transport in GaN/AlGaN heterostructures

AU - Barker, J. M.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Koleske, D. D.

AU - Allerman, A.

AU - Shul, R. J.

PY - 2004/7

Y1 - 2004/7

N2 - The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.

AB - The velocity-field characteristics of AlGaN/GaN heterostructures were investigated. It was observed that even in the case of the nonequilibrium phonons, the phonon lifetime is smaller than that in bulk GaN. Some reduction of the lifetime from its bulk value was suggested to be due to the strain in the heterostructure. Several possible mechanisms for the low value of the velocity were also discussed, including nonequilibrium phonons and local inhomogeneities in the field.

UR - http://www.scopus.com/inward/record.url?scp=4944228367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944228367&partnerID=8YFLogxK

U2 - 10.1116/1.1775199

DO - 10.1116/1.1775199

M3 - Article

AN - SCOPUS:4944228367

SN - 1071-1023

VL - 22

SP - 2045

EP - 2050

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

High field transport in GaN/AlGaN heterostructures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this