High-field transport and electroluminescence in ZnS phosphor layers

Manfred Dür, Stephen Goodnick, Shankar S. Pennathur, John F. Wager, Martin Reigrotzki, Ronald Redmer

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Abstract

A full-band Monte Carlo simulation of the high-field electron transport in the ZnS phosphor layer of an alternating-current thin-film electroluminescent device is performed. The simulation includes a nonlocal empirical pseudopotential band structure for ZnS and the relevant scattering mechanisms for electrons in the first four conduction bands, including band-to-band impact ionization and impact excitation of Mn2+ luminescent centers. The steady-state electron energy distribution in the ZnS layer is computed for phosphor fields from 1 to 2 MV/cm. The simulation reveals a substantial fraction of electrons with energies in excess of the Mn2+ impact excitation threshold. The computed impact excitation yield for carriers transiting the phosphor layer exhibits an approximately linear increase with increasing phosphor field above threshold. The onset of Mn2+ impact excitation coincides with the onset of band-to-band impact ionization of electron-hole pairs which prevents electron runaway at high electric fields.

Original languageEnglish (US)
Pages (from-to)3176-3185
Number of pages10
JournalJournal of Applied Physics
Volume83
Issue number6
Publication statusPublished - 1998

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Dür, M., Goodnick, S., Pennathur, S. S., Wager, J. F., Reigrotzki, M., & Redmer, R. (1998). High-field transport and electroluminescence in ZnS phosphor layers. Journal of Applied Physics, 83(6), 3176-3185.