High-field electron transport in GaAs

a picosecond time-resolved Raman probe

Erik D. Grann, Shou J. Sheih, C. Chia, Kong-Thon Tsen, Otto F. Sankey, George N. Maracas, R. Droopad, A. Salvador, A. Botcharev, Hadis Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDavid K. Ferry, Henry M. van Driel
Pages190-197
Number of pages8
Volume2142
StatePublished - 1994
EventUltrafast Phenomena in Semiconductors - Los Angeles, CA, USA
Duration: Jan 27 1994Jan 28 1994

Other

OtherUltrafast Phenomena in Semiconductors
CityLos Angeles, CA, USA
Period1/27/941/28/94

Fingerprint

Raman spectroscopy
Nanostructures
Electric fields
Semiconductor materials
electric fields
probes
Ballistics
ballistics
Carrier concentration
electrons
Electrons
Electron Transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K-T., Sankey, O. F., Maracas, G. N., ... Morkoc, H. (1994). High-field electron transport in GaAs: a picosecond time-resolved Raman probe. In D. K. Ferry, & H. M. van Driel (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2142, pp. 190-197)

High-field electron transport in GaAs : a picosecond time-resolved Raman probe. / Grann, Erik D.; Sheih, Shou J.; Chia, C.; Tsen, Kong-Thon; Sankey, Otto F.; Maracas, George N.; Droopad, R.; Salvador, A.; Botcharev, A.; Morkoc, Hadis.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / David K. Ferry; Henry M. van Driel. Vol. 2142 1994. p. 190-197.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Grann, ED, Sheih, SJ, Chia, C, Tsen, K-T, Sankey, OF, Maracas, GN, Droopad, R, Salvador, A, Botcharev, A & Morkoc, H 1994, High-field electron transport in GaAs: a picosecond time-resolved Raman probe. in DK Ferry & HM van Driel (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2142, pp. 190-197, Ultrafast Phenomena in Semiconductors, Los Angeles, CA, USA, 1/27/94.
Grann ED, Sheih SJ, Chia C, Tsen K-T, Sankey OF, Maracas GN et al. High-field electron transport in GaAs: a picosecond time-resolved Raman probe. In Ferry DK, van Driel HM, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2142. 1994. p. 190-197
Grann, Erik D. ; Sheih, Shou J. ; Chia, C. ; Tsen, Kong-Thon ; Sankey, Otto F. ; Maracas, George N. ; Droopad, R. ; Salvador, A. ; Botcharev, A. ; Morkoc, Hadis. / High-field electron transport in GaAs : a picosecond time-resolved Raman probe. Proceedings of SPIE - The International Society for Optical Engineering. editor / David K. Ferry ; Henry M. van Driel. Vol. 2142 1994. pp. 190-197
@inproceedings{e865e1bacbde4f43803d42476835779f,
title = "High-field electron transport in GaAs: a picosecond time-resolved Raman probe",
abstract = "Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.",
author = "Grann, {Erik D.} and Sheih, {Shou J.} and C. Chia and Kong-Thon Tsen and Sankey, {Otto F.} and Maracas, {George N.} and R. Droopad and A. Salvador and A. Botcharev and Hadis Morkoc",
year = "1994",
language = "English (US)",
isbn = "0819414379",
volume = "2142",
pages = "190--197",
editor = "Ferry, {David K.} and {van Driel}, {Henry M.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - High-field electron transport in GaAs

T2 - a picosecond time-resolved Raman probe

AU - Grann, Erik D.

AU - Sheih, Shou J.

AU - Chia, C.

AU - Tsen, Kong-Thon

AU - Sankey, Otto F.

AU - Maracas, George N.

AU - Droopad, R.

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoc, Hadis

PY - 1994

Y1 - 1994

N2 - Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

AB - Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=0028743894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028743894&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0819414379

SN - 9780819414373

VL - 2142

SP - 190

EP - 197

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Ferry, David K.

A2 - van Driel, Henry M.

ER -