Abstract

The double-flip transfer of indium phosphide (InP) based transistors onto plastic flexible substrates was demonstrated. Modulation doped field effect transistor layers, epitaxially grown on InP bulk substrates, were transferred onto sapphire using a masked ion-cutting process. Following layer transfer, transistors were fabricated at low temperatures (<150 °C). The device structure was then bonded to flexible substrate, and laser ablation was used to separate the initial bond. The transferred transistors were characterized and exhibited high field-effect mobility (μavera ge ∼2800 cm2 V-1 s-1).

Original languageEnglish (US)
Article number203509
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
StatePublished - May 16 2011

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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