High electron mobility in modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures with highly strained AllnAs grown by molecular beam epitaxy

Yong-Hang Zhang, L. Tapfer, K. Ploog

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

N-type modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures grown by molecular beam epitaxy on InP substrate have been characterised by double-crystal x-ray diffraction and x-ray topography, temperature-dependent Hall measurements, and photoluminescence and absorption spectroscopy. Both the constituent GaxIn1-xAs (x = 0.453) and the AlyIn1-yAs (y = 0.421) layers are strained. X-ray Pendellosung fringes from the GaxIn1-xAs as well as the AlyIn1-yAs epilayers are observed, indicating an almost perfect interface smoothness and homogeneity of the layer composition. In photoluminescence the excellent material quality manifests itself in the narrow bound exciton peak from the GaxIn1-xAs layer and in the absence of any transition related to the 2D electrons and holes trapped near the heterointerface.

Original languageEnglish (US)
Pages (from-to)590-595
Number of pages6
JournalSemiconductor Science and Technology
Volume5
Issue number6
DOIs
StatePublished - Jun 1990
Externally publishedYes

Fingerprint

Electron mobility
electron mobility
Molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Modulation
modulation
X rays
photoluminescence
Photoluminescence spectroscopy
Epilayers
Electron transitions
Absorption spectroscopy
Excitons
Topography
homogeneity
Photoluminescence
topography
absorption spectroscopy
x ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

@article{23163a92e8914ae9a3209165a138b036,
title = "High electron mobility in modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures with highly strained AllnAs grown by molecular beam epitaxy",
abstract = "N-type modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures grown by molecular beam epitaxy on InP substrate have been characterised by double-crystal x-ray diffraction and x-ray topography, temperature-dependent Hall measurements, and photoluminescence and absorption spectroscopy. Both the constituent GaxIn1-xAs (x = 0.453) and the AlyIn1-yAs (y = 0.421) layers are strained. X-ray Pendellosung fringes from the GaxIn1-xAs as well as the AlyIn1-yAs epilayers are observed, indicating an almost perfect interface smoothness and homogeneity of the layer composition. In photoluminescence the excellent material quality manifests itself in the narrow bound exciton peak from the GaxIn1-xAs layer and in the absence of any transition related to the 2D electrons and holes trapped near the heterointerface.",
author = "Yong-Hang Zhang and L. Tapfer and K. Ploog",
year = "1990",
month = "6",
doi = "10.1088/0268-1242/5/6/023",
language = "English (US)",
volume = "5",
pages = "590--595",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "6",

}

TY - JOUR

T1 - High electron mobility in modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures with highly strained AllnAs grown by molecular beam epitaxy

AU - Zhang, Yong-Hang

AU - Tapfer, L.

AU - Ploog, K.

PY - 1990/6

Y1 - 1990/6

N2 - N-type modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures grown by molecular beam epitaxy on InP substrate have been characterised by double-crystal x-ray diffraction and x-ray topography, temperature-dependent Hall measurements, and photoluminescence and absorption spectroscopy. Both the constituent GaxIn1-xAs (x = 0.453) and the AlyIn1-yAs (y = 0.421) layers are strained. X-ray Pendellosung fringes from the GaxIn1-xAs as well as the AlyIn1-yAs epilayers are observed, indicating an almost perfect interface smoothness and homogeneity of the layer composition. In photoluminescence the excellent material quality manifests itself in the narrow bound exciton peak from the GaxIn1-xAs layer and in the absence of any transition related to the 2D electrons and holes trapped near the heterointerface.

AB - N-type modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures grown by molecular beam epitaxy on InP substrate have been characterised by double-crystal x-ray diffraction and x-ray topography, temperature-dependent Hall measurements, and photoluminescence and absorption spectroscopy. Both the constituent GaxIn1-xAs (x = 0.453) and the AlyIn1-yAs (y = 0.421) layers are strained. X-ray Pendellosung fringes from the GaxIn1-xAs as well as the AlyIn1-yAs epilayers are observed, indicating an almost perfect interface smoothness and homogeneity of the layer composition. In photoluminescence the excellent material quality manifests itself in the narrow bound exciton peak from the GaxIn1-xAs layer and in the absence of any transition related to the 2D electrons and holes trapped near the heterointerface.

UR - http://www.scopus.com/inward/record.url?scp=0025442785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025442785&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/5/6/023

DO - 10.1088/0268-1242/5/6/023

M3 - Article

AN - SCOPUS:0025442785

VL - 5

SP - 590

EP - 595

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

ER -