High electron mobility in modulation-doped Ga_xIn _1-xAs/Al_yIn_1-yAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy

Engineering & Materials Science

• Electron mobility 100%
• Molecular beam epitaxy 98%
• Heterojunctions 83%
• Photoluminescence spectroscopy 66%
• Electron transitions 60%
• X rays 57%
• Excitons 56%
• Epilayers 54%
• Photoluminescence 51%
• Modulation 49%
• Absorption spectroscopy 48%
• Topography 36%
• Electrons 32%
• Crystals 31%
• X ray diffraction 31%
• Substrates 22%
• Chemical analysis 20%
• Temperature 12%

Chemical Compounds

• Molecular Beam Epitaxy 91%
• Electron Mobility 76%
• Bound Exciton 53%
• X-Ray Topography 52%
• Photoluminescence Spectroscopy 34%
• Absorption Spectroscopy 30%
• Homogeneity 28%
• Photoluminescence 24%
• Strain 22%
• X-Ray 19%
• Electron Particle 17%
• X-Ray Diffraction 15%

Physics & Astronomy

• electron mobility 65%
• molecular beam epitaxy 54%
• modulation 42%
• photoluminescence 29%
• x rays 28%
• homogeneity 20%
• topography 19%
• absorption spectroscopy 19%
• excitons 16%
• diffraction 11%
• crystals 10%
• electrons 8%
• temperature 6%