High electron mobility in modulation-doped GaxIn 1-xAs/AlyIn1-yAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy

Y. H. Zhang, L. Tapfer, K. Ploog

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

N-type modulation-doped GaxIn1-xAs/Al yIn1-yAs heterostructures grown by molecular beam epitaxy on InP substrate have been characterised by double-crystal X-ray diffraction and X-ray topography, temperature-dependent Hall measurements, and photoluminescence and absorption spectroscopy. Both the constituent Ga xIn1-xAs (x=0.453) and the AlyIn 1-yAs (y=0.421) layers are strained. X-ray Pendellosung fringes from the GaxIn1-xAs as well as the AlyIn 1-yAs epilayers are observed, indicating an almost perfect interface smoothness and homogeneity of the layer composition. Despite the highly strained AlyIn1-yAs the electron mobility reaches 9.0*103, 6.5*104, and 8.9*104 cm2 V-1 s-1 at 300, 77 and 4 K, respectively, thus indicating only a minor influence of the strain of the Al yIn1-yAs upon the 2D electron mobility. In photoluminescence the excellent material quality manifests itself in the narrow bound exciton peak from the GaxIn1-xAs layer and in the absence of any transition related to the 2D electrons and holes trapped near the heterointerface.

Original languageEnglish (US)
Article number023
Pages (from-to)590-595
Number of pages6
JournalSemiconductor Science and Technology
Volume5
Issue number6
DOIs
StatePublished - Dec 1 1990
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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