HIGH-ELECTRIC FIELD TRANSPORT OF ELECTRONS IN SiO//2.

D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Scopus citations

Abstract

The transport of electrons at high electric fields in SiO//2 has been calculated using an iterative solution of the path-variable form of the Boltzmann equation. Scattering due to the polar-optical modes and acoustic modes of the lattice were included. It is found that both the 0. 153eV and 0. 063 eV polar optical modes are important for scattering of electrons. The ″saturated″ velocity is near 1. 9 multiplied by 10**7cm/sec. The calculated velocity-field curves are in excellent agreement with experiment, yielding a best estimate of the polaron corrected conductivity mass of 1. 3m. Time resolved plar runaway is observed with an absolute threshold field near 1 multiplied by 10**7V/cm, with the runaway field increasing for short times, such as may be appropriate for transport through thin oxides. Impact ionization is found to occur at fields near 1 multiplied by 10**7V/cm for realistic mass ratios.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
Place of PublicationNew York, NY
PublisherPergamon Press
Pages29-34
Number of pages6
StatePublished - 1978
Externally publishedYes
EventProc of the Int Top Conf on the Phys of SiO2 and its Interfaces - Yorktown Heights, NY, USA
Duration: Mar 22 1978Mar 24 1978

Other

OtherProc of the Int Top Conf on the Phys of SiO2 and its Interfaces
CityYorktown Heights, NY, USA
Period3/22/783/24/78

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ferry, D. K. (1978). HIGH-ELECTRIC FIELD TRANSPORT OF ELECTRONS IN SiO//2. In Unknown Host Publication Title (pp. 29-34). Pergamon Press.