Abstract
The transport of electrons at high electric fields in SiO//2 has been calculated using an iterative solution of the path-variable form of the Boltzmann equation. Scattering due to the polar-optical modes and acoustic modes of the lattice were included. It is found that both the 0. 153eV and 0. 063 eV polar optical modes are important for scattering of electrons. The ″saturated″ velocity is near 1. 9 multiplied by 10**7cm/sec. The calculated velocity-field curves are in excellent agreement with experiment, yielding a best estimate of the polaron corrected conductivity mass of 1. 3m. Time resolved plar runaway is observed with an absolute threshold field near 1 multiplied by 10**7V/cm, with the runaway field increasing for short times, such as may be appropriate for transport through thin oxides. Impact ionization is found to occur at fields near 1 multiplied by 10**7V/cm for realistic mass ratios.
| Original language | English (US) |
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| Title of host publication | Unknown Host Publication Title |
| Place of Publication | New York, NY |
| Publisher | Pergamon Press |
| Pages | 29-34 |
| Number of pages | 6 |
| State | Published - 1978 |
| Externally published | Yes |
| Event | Proc of the Int Top Conf on the Phys of SiO2 and its Interfaces - Yorktown Heights, NY, USA Duration: Mar 22 1978 → Mar 24 1978 |
Other
| Other | Proc of the Int Top Conf on the Phys of SiO2 and its Interfaces |
|---|---|
| City | Yorktown Heights, NY, USA |
| Period | 3/22/78 → 3/24/78 |
ASJC Scopus subject areas
- General Engineering