High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

Shuichiro Yamamoto; Yuji Zhao; Chih Chien Pan; Roy B. Chung; Kenji Fujito; Junichi Sonoda; Steven P. DenBaars; Shuji Nakamura

doi:10.1143/APEX.3.122102

High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

Shuichiro Yamamoto, Yuji Zhao, Chih Chien Pan, Roy B. Chung, Kenji Fujito, Junichi Sonoda, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

184 Scopus citations

Abstract

We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (20̄21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.

Original language	English (US)
Article number	122102
Journal	Applied Physics Express
Volume	3
Issue number	12
DOIs	https://doi.org/10.1143/APEX.3.122102
State	Published - Dec 2010
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2{\=0}21) GaN substrates",

abstract = "We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (2{\=0}21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.",

author = "Shuichiro Yamamoto and Yuji Zhao and Pan, {Chih Chien} and Chung, {Roy B.} and Kenji Fujito and Junichi Sonoda and DenBaars, {Steven P.} and Shuji Nakamura",

year = "2010",

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doi = "10.1143/APEX.3.122102",

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volume = "3",

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T1 - High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

AU - Yamamoto, Shuichiro

AU - Zhao, Yuji

AU - Pan, Chih Chien

AU - Chung, Roy B.

AU - Fujito, Kenji

AU - Sonoda, Junichi

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2010/12

Y1 - 2010/12

N2 - We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (20̄21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.

AB - We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (20̄21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.

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High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

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