High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates

Shuichiro Yamamoto, Yuji Zhao, Chih Chien Pan, Roy B. Chung, Kenji Fujito, Junichi Sonoda, Steven P. DenBaars, Shuji Nakamura

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Abstract

We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (20̄21) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20mA under a pulsed condition with a 10% duty cycle are 9.9mW and 20.4% for the green LED and 5.7mW and 12.6% for the yellow-green LED, respectively.The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.

Original languageEnglish (US)
Article number122102
JournalApplied Physics Express
Volume3
Issue number12
DOIs
StatePublished - Dec 1 2010

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yamamoto, S., Zhao, Y., Pan, C. C., Chung, R. B., Fujito, K., Sonoda, J., DenBaars, S. P., & Nakamura, S. (2010). High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates. Applied Physics Express, 3(12), [122102]. https://doi.org/10.1143/APEX.3.122102