High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

C. M. Fetzer; R. R. King; P. C. Colter; K. M. Edmondson; D. C. Law; A. P. Stavrides; H. Yoon; J. H. Ermer; M. J. Romero; N. H. Karam

doi:10.1016/j.jcrysgro.2003.11.026

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

C. M. Fetzer, R. R. King, P. C. Colter, K. M. Edmondson, D. C. Law, A. P. Stavrides, H. Yoon, J. H. Ermer, M. J. Romero, N. H. Karam

Research output: Contribution to journal › Conference article › peer-review

46 Scopus citations

Abstract

This paper focuses on the metal-organic vapor-phase epitaxy growth of 3-junction (3J) solar cells where the epitaxial Ga_0.44In _0.56P top and Ga_0.92In_0.08As middle subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 8% and 12%-In, GaInAs are grown on 100 mm dia. (001) Ge substrates and evaluated in comparison to approximately lattice-matched GaAs and Ga _0.99In_0.01As subcells. Layers are observed to be nearly 100% relaxed by high-resolution X-ray diffraction. Threading dislocation densities of ∼2 × 10⁵cm^-2 in the 8%-In layers are observed by electron beam induced current and cathodoluminescence. Single-junction devices show a constant offset between open-circuit voltage and bandgap of ∼380 mV. Building upon these results, 3J metamorphic Ga _0.44In_0.56P/Ga_0.92In_0.08As/Ge solar cells are fabricated. Very high performances of small area devices are reported with 28.8% efficiency under the AM0 spectrum and 31.3% efficiency under the AM1.5G 1-sun terrestrial spectrum.

Original language	English (US)
Pages (from-to)	341-348
Number of pages	8
Journal	Journal of Crystal Growth
Volume	261
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.11.026
State	Published - Jan 19 2004
Externally published	Yes
Event	Proceedings of the 11th Biennia, (US) Workshop on Organometall - Keystone, CO, United States Duration: Jul 20 2003 → Jul 24 2003

Keywords

A1. Metamorphic
A3. Metalorganic vapor phase epitaxy
B1. GaInAs
B1. GaInP
B1. Germanium
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2003.11.026

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@article{6dfe5069b40946d9b7d81ee5dcb9dc2f,

title = "High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE",

abstract = "This paper focuses on the metal-organic vapor-phase epitaxy growth of 3-junction (3J) solar cells where the epitaxial Ga0.44In 0.56P top and Ga0.92In0.08As middle subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 8% and 12%-In, GaInAs are grown on 100 mm dia. (001) Ge substrates and evaluated in comparison to approximately lattice-matched GaAs and Ga 0.99In0.01As subcells. Layers are observed to be nearly 100% relaxed by high-resolution X-ray diffraction. Threading dislocation densities of ∼2 × 105cm-2 in the 8%-In layers are observed by electron beam induced current and cathodoluminescence. Single-junction devices show a constant offset between open-circuit voltage and bandgap of ∼380 mV. Building upon these results, 3J metamorphic Ga 0.44In0.56P/Ga0.92In0.08As/Ge solar cells are fabricated. Very high performances of small area devices are reported with 28.8% efficiency under the AM0 spectrum and 31.3% efficiency under the AM1.5G 1-sun terrestrial spectrum.",

keywords = "A1. Metamorphic, A3. Metalorganic vapor phase epitaxy, B1. GaInAs, B1. GaInP, B1. Germanium, B3. Solar cells",

author = "Fetzer, {C. M.} and King, {R. R.} and Colter, {P. C.} and Edmondson, {K. M.} and Law, {D. C.} and Stavrides, {A. P.} and H. Yoon and Ermer, {J. H.} and Romero, {M. J.} and Karam, {N. H.}",

note = "Funding Information: The authors would like to thank Keith Emery, Tom Moriarty, James Kiehl and the PV Performance Characterization Team for their measurements at NREL, Mark Takahashi, Dimitri Krut, and the entire multijunction characterization team at Spectrolab. This work was supported in part by the Air Force Research Laboratory (AFRL/VS) through the Dual Use Science and Technology program AFRL Contract ♯ F29601-98-2-0207, in part by the Department of Energy through the NREL High-Performance Photovoltaics program (NAT-1-30620-01), and by Spectrolab, Inc. ; Proceedings of the 11th Biennia, (US) Workshop on Organometall ; Conference date: 20-07-2003 Through 24-07-2003",

year = "2004",

month = jan,

day = "19",

doi = "10.1016/j.jcrysgro.2003.11.026",

language = "English (US)",

volume = "261",

pages = "341--348",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "2-3",

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TY - JOUR

T1 - High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

AU - Fetzer, C. M.

AU - King, R. R.

AU - Colter, P. C.

AU - Edmondson, K. M.

AU - Law, D. C.

AU - Stavrides, A. P.

AU - Yoon, H.

AU - Ermer, J. H.

AU - Romero, M. J.

AU - Karam, N. H.

N1 - Funding Information: The authors would like to thank Keith Emery, Tom Moriarty, James Kiehl and the PV Performance Characterization Team for their measurements at NREL, Mark Takahashi, Dimitri Krut, and the entire multijunction characterization team at Spectrolab. This work was supported in part by the Air Force Research Laboratory (AFRL/VS) through the Dual Use Science and Technology program AFRL Contract ♯ F29601-98-2-0207, in part by the Department of Energy through the NREL High-Performance Photovoltaics program (NAT-1-30620-01), and by Spectrolab, Inc.

PY - 2004/1/19

Y1 - 2004/1/19

N2 - This paper focuses on the metal-organic vapor-phase epitaxy growth of 3-junction (3J) solar cells where the epitaxial Ga0.44In 0.56P top and Ga0.92In0.08As middle subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 8% and 12%-In, GaInAs are grown on 100 mm dia. (001) Ge substrates and evaluated in comparison to approximately lattice-matched GaAs and Ga 0.99In0.01As subcells. Layers are observed to be nearly 100% relaxed by high-resolution X-ray diffraction. Threading dislocation densities of ∼2 × 105cm-2 in the 8%-In layers are observed by electron beam induced current and cathodoluminescence. Single-junction devices show a constant offset between open-circuit voltage and bandgap of ∼380 mV. Building upon these results, 3J metamorphic Ga 0.44In0.56P/Ga0.92In0.08As/Ge solar cells are fabricated. Very high performances of small area devices are reported with 28.8% efficiency under the AM0 spectrum and 31.3% efficiency under the AM1.5G 1-sun terrestrial spectrum.

AB - This paper focuses on the metal-organic vapor-phase epitaxy growth of 3-junction (3J) solar cells where the epitaxial Ga0.44In 0.56P top and Ga0.92In0.08As middle subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 8% and 12%-In, GaInAs are grown on 100 mm dia. (001) Ge substrates and evaluated in comparison to approximately lattice-matched GaAs and Ga 0.99In0.01As subcells. Layers are observed to be nearly 100% relaxed by high-resolution X-ray diffraction. Threading dislocation densities of ∼2 × 105cm-2 in the 8%-In layers are observed by electron beam induced current and cathodoluminescence. Single-junction devices show a constant offset between open-circuit voltage and bandgap of ∼380 mV. Building upon these results, 3J metamorphic Ga 0.44In0.56P/Ga0.92In0.08As/Ge solar cells are fabricated. Very high performances of small area devices are reported with 28.8% efficiency under the AM0 spectrum and 31.3% efficiency under the AM1.5G 1-sun terrestrial spectrum.

KW - A1. Metamorphic

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. GaInAs

KW - B1. GaInP

KW - B1. Germanium

KW - B3. Solar cells

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U2 - 10.1016/j.jcrysgro.2003.11.026

DO - 10.1016/j.jcrysgro.2003.11.026

M3 - Conference article

AN - SCOPUS:0347415791

SN - 0022-0248

VL - 261

SP - 341

EP - 348

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

T2 - Proceedings of the 11th Biennia, (US) Workshop on Organometall

Y2 - 20 July 2003 through 24 July 2003

ER -

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Abstract

Keywords

ASJC Scopus subject areas

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