Abstract
We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native (undoped) device performance by a factor of 4.5 and is the highest PCE reported for graphene-based solar cells to date. Current-voltage, capacitance-voltage, and external quantum efficiency measurements show the enhancement to be due to the doping-induced shift in the graphene chemical potential that increases the graphene carrier density (decreasing the cell series resistance) and increases the cell's built-in potential (increasing the open circuit voltage) both of which improve the solar cell fill factor.
Original language | English (US) |
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Pages (from-to) | 2745-2750 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 12 |
Issue number | 6 |
DOIs | |
State | Published - Jun 13 2012 |
Externally published | Yes |
Keywords
- Schottky junctions
- capacitance-voltage
- chemical doping of graphene
- current-voltage
- external quantum efficiency
- graphene/n-Si solar cells
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering