TY - GEN
T1 - High-dv/dt-immune parameter-adaptive synchronous rectifier (SR) driving scheme in high-frequency high-power-density applications
AU - Zhang, Zhengda
AU - Liu, Chunhui
AU - Si, Yunpeng
AU - Liu, Yifu
AU - Wang, Mengzhi
AU - Lei, Qin
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/7/18
Y1 - 2021/7/18
N2 - The synchronous rectifier (SR) is usually utilized to reduce the conduction loss and reverse recovery loss compared with the conventional diode bridge rectifier. However, the precise detection of the SR current zero-crossing is very challenging in high-frequency and high-power-density applications. The commercial SR drivers suffer from poor zero-crossing detection accuracy due to the device package inductance. Meanwhile, the conventional diode/FET blocking approach has over-voltage and oscillation issues during the high dv/dt transients. In this paper, a novel self-driven drain-to-source voltage sensing circuit is proposed. The circuit provides a paralleled low-impedance path to bypass the displacement current during the high dv/dt transients, which addresses the over-voltage and oscillation issues. Moreover, the adaptive SR on-time tuning algorithm is implemented, which eliminates the zero-crossing detection errors caused by the package and loop stray inductance. A 3.3 kW, 500 kHz CLLC resonant converter prototype is built to validate the proposed SR driving scheme. The prototype demonstrates the peak efficiency of 97.6% and the power density of 130 W/inch3.
AB - The synchronous rectifier (SR) is usually utilized to reduce the conduction loss and reverse recovery loss compared with the conventional diode bridge rectifier. However, the precise detection of the SR current zero-crossing is very challenging in high-frequency and high-power-density applications. The commercial SR drivers suffer from poor zero-crossing detection accuracy due to the device package inductance. Meanwhile, the conventional diode/FET blocking approach has over-voltage and oscillation issues during the high dv/dt transients. In this paper, a novel self-driven drain-to-source voltage sensing circuit is proposed. The circuit provides a paralleled low-impedance path to bypass the displacement current during the high dv/dt transients, which addresses the over-voltage and oscillation issues. Moreover, the adaptive SR on-time tuning algorithm is implemented, which eliminates the zero-crossing detection errors caused by the package and loop stray inductance. A 3.3 kW, 500 kHz CLLC resonant converter prototype is built to validate the proposed SR driving scheme. The prototype demonstrates the peak efficiency of 97.6% and the power density of 130 W/inch3.
KW - Gate driving
KW - High dv/dt
KW - High frequency
KW - High power density
KW - Resonant converter
KW - Synchronous rectification
KW - Wideband-gap (WBG) devices
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U2 - 10.1109/ICDCM50975.2021.9504640
DO - 10.1109/ICDCM50975.2021.9504640
M3 - Conference contribution
AN - SCOPUS:85114936666
T3 - 2021 IEEE 4th International Conference on DC Microgrids, ICDCM 2021
BT - 2021 IEEE 4th International Conference on DC Microgrids, ICDCM 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th IEEE International Conference on DC Microgrids, ICDCM 2021
Y2 - 18 July 2021 through 21 July 2021
ER -