High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester; F. A. Ponce; M. G. Craford; D. A. Steigerwald

doi:10.1063/1.113252

High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford, D. A. Steigerwald

Research output: Contribution to journal › Article › peer-review

960 Scopus citations

Abstract

The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2×10¹⁰cm^-2. A comparison to other III-V arsenide and phosphide LEDs shows that minority carries in GaN-based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III-V nitrides.

Original language	English (US)
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113252
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.113252

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title = "High dislocation densities in high efficiency GaN-based light-emitting diodes",

abstract = "The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2×1010cm-2. A comparison to other III-V arsenide and phosphide LEDs shows that minority carries in GaN-based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III-V nitrides.",

author = "Lester, {S. D.} and Ponce, {F. A.} and Craford, {M. G.} and Steigerwald, {D. A.}",

year = "1995",

doi = "10.1063/1.113252",

language = "English (US)",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - High dislocation densities in high efficiency GaN-based light-emitting diodes

AU - Lester, S. D.

AU - Ponce, F. A.

AU - Craford, M. G.

AU - Steigerwald, D. A.

PY - 1995

Y1 - 1995

N2 - The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2×1010cm-2. A comparison to other III-V arsenide and phosphide LEDs shows that minority carries in GaN-based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III-V nitrides.

AB - The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2×1010cm-2. A comparison to other III-V arsenide and phosphide LEDs shows that minority carries in GaN-based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III-V nitrides.

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DO - 10.1063/1.113252

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SN - 0003-6951

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

High dislocation densities in high efficiency GaN-based light-emitting diodes

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