High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford, D. A. Steigerwald

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Abstract

The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2×1010cm-2. A comparison to other III-V arsenide and phosphide LEDs shows that minority carries in GaN-based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III-V nitrides.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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