High crystalline-quality III-V layer transfer onto Si substrate

Peng Chen, Yi Jing, S. S. Lau, Dapeng Xu, Luke Mawst, Terry Alford, Charles Paulson, T. F. Kuech

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Abstract

In this study, an approach combining ion cutting and selective chemical etch for the transfer of high crystalline-quality III-V layers on Si O2 Si substrate has been investigated. This layer transfer scheme takes advantage of the ion-cutting process by conserving III-V substrates for reuse and simultaneously improving the transferred layer quality and surface condition without using chemical and mechanical polishing. The relocation of the ion-implantation damage maximum enables the transfer of relatively defect-free InP-based layers onto a Si substrate coated with an oxide layer and results in structures ready for further optoelectronic device fabrication or epitaxial growth.

Original languageEnglish (US)
Article number092107
JournalApplied Physics Letters
Volume92
Issue number9
DOIs
StatePublished - Mar 14 2008

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, P., Jing, Y., Lau, S. S., Xu, D., Mawst, L., Alford, T., Paulson, C., & Kuech, T. F. (2008). High crystalline-quality III-V layer transfer onto Si substrate. Applied Physics Letters, 92(9), [092107]. https://doi.org/10.1063/1.2890494