High crystalline-quality III-V layer transfer onto Si substrate

In this study, an approach combining ion cutting and selective chemical etch for the transfer of high crystalline-quality III-V layers on Si O2 Si substrate has been investigated. This layer transfer scheme takes advantage of the ion-cutting process by conserving III-V substrates for reuse and simultaneously improving the transferred layer quality and surface condition without using chemical and mechanical polishing. The relocation of the ion-implantation damage maximum enables the transfer of relatively defect-free InP-based layers onto a Si substrate coated with an oxide layer and results in structures ready for further optoelectronic device fabrication or epitaxial growth.