High crystalline-quality III-V layer transfer onto Si substrate

Peng Chen, Yi Jing, S. S. Lau, Dapeng Xu, Luke Mawst, Terry Alford, Charles Paulson, T. F. Kuech

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21 Scopus citations


In this study, an approach combining ion cutting and selective chemical etch for the transfer of high crystalline-quality III-V layers on Si O2 Si substrate has been investigated. This layer transfer scheme takes advantage of the ion-cutting process by conserving III-V substrates for reuse and simultaneously improving the transferred layer quality and surface condition without using chemical and mechanical polishing. The relocation of the ion-implantation damage maximum enables the transfer of relatively defect-free InP-based layers onto a Si substrate coated with an oxide layer and results in structures ready for further optoelectronic device fabrication or epitaxial growth.

Original languageEnglish (US)
Article number092107
JournalApplied Physics Letters
Issue number9
StatePublished - Mar 14 2008


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, P., Jing, Y., Lau, S. S., Xu, D., Mawst, L., Alford, T., Paulson, C., & Kuech, T. F. (2008). High crystalline-quality III-V layer transfer onto Si substrate. Applied Physics Letters, 92(9), [092107]. https://doi.org/10.1063/1.2890494