High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

D. K. Fork; F. A. Ponce; J. C. Tramontana; N. Newman; Julia M. Phillips; T. H. Geballe

doi:10.1063/1.104864

High critical current densities in epitaxial YBa₂Cu ₃O_7-δ thin films on silicon-on-sapphire

D. K. Fork, F. A. Ponce, J. C. Tramontana, N. Newman, Julia M. Phillips, T. H. Geballe

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36 Scopus citations

Abstract

The use of silicon on sapphire (SOS) as a substrate for YBa ₂Cu₃O_7-δ allows the growth of thick (∼4000 Å) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×10⁶ A/cm² at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.

Original language	English (US)
Pages (from-to)	2432-2434
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	21
DOIs	https://doi.org/10.1063/1.104864
State	Published - 1991
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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title = "High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire",

abstract = "The use of silicon on sapphire (SOS) as a substrate for YBa 2Cu3O7-δ allows the growth of thick (∼4000 {\AA}) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.",

author = "Fork, {D. K.} and Ponce, {F. A.} and Tramontana, {J. C.} and N. Newman and Phillips, {Julia M.} and Geballe, {T. H.}",

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doi = "10.1063/1.104864",

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T1 - High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

AU - Fork, D. K.

AU - Ponce, F. A.

AU - Tramontana, J. C.

AU - Newman, N.

AU - Phillips, Julia M.

AU - Geballe, T. H.

PY - 1991

Y1 - 1991

N2 - The use of silicon on sapphire (SOS) as a substrate for YBa 2Cu3O7-δ allows the growth of thick (∼4000 Å) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.

AB - The use of silicon on sapphire (SOS) as a substrate for YBa 2Cu3O7-δ allows the growth of thick (∼4000 Å) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.

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High critical current densities in epitaxial YBa₂Cu ₃O_7-δ thin films on silicon-on-sapphire

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