High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

D. K. Fork, F. A. Ponce, J. C. Tramontana, N. Newman, Julia M. Phillips, T. H. Geballe

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

The use of silicon on sapphire (SOS) as a substrate for YBa 2Cu3O7-δ allows the growth of thick (∼4000 Å) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.

Original languageEnglish (US)
Pages (from-to)2432-2434
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number21
DOIs
StatePublished - Dec 1 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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