High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

D. K. Fork, Fernando Ponce, J. C. Tramontana, Nathan Newman, Julia M. Phillips, T. H. Geballe

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The use of silicon on sapphire (SOS) as a substrate for YBa 2Cu3O7-δ allows the growth of thick (∼4000 Å) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.

Original languageEnglish (US)
Pages (from-to)2432-2434
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number21
DOIs
StatePublished - 1991
Externally publishedYes

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critical current
sapphire
current density
silicon
thin films
epitaxy
thick films
buffers
propagation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire. / Fork, D. K.; Ponce, Fernando; Tramontana, J. C.; Newman, Nathan; Phillips, Julia M.; Geballe, T. H.

In: Applied Physics Letters, Vol. 58, No. 21, 1991, p. 2432-2434.

Research output: Contribution to journalArticle

Fork, D. K. ; Ponce, Fernando ; Tramontana, J. C. ; Newman, Nathan ; Phillips, Julia M. ; Geballe, T. H. / High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire. In: Applied Physics Letters. 1991 ; Vol. 58, No. 21. pp. 2432-2434.
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