High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts

Yuan Zhao, Mathieu Boccard, Jacob Becker, Xin Hao Zhao, Calli M. Campbell, Ernesto Suarez, Maxwell B. Lassise, Zachary Holman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

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Keywords

  • Amorphous materials
  • Cadmium compounds
  • II-VI semiconductor materials
  • Photovoltaic cells
  • Silicon
  • Thin films

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zhao, Y., Boccard, M., Becker, J., Zhao, X. H., Campbell, C. M., Suarez, E., Lassise, M. B., Holman, Z., & Zhang, Y-H. (2018). High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366830