High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si

H hole-contacts

Yuan Zhao, Mathieu Boccard, Jacob Becker, Xin Hao Zhao, Calli M. Campbell, Ernesto Suarez, Maxwell B. Lassise, Zachary Holman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017 → Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/17 → 6/30/17

Fingerprint

Capacitance measurement
Voltage measurement
Fermi level
Heterojunctions
Solar cells
Electric potential

Keywords

  • Amorphous materials
  • Cadmium compounds
  • II-VI semiconductor materials
  • Photovoltaic cells
  • Silicon
  • Thin films

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zhao, Y., Boccard, M., Becker, J., Zhao, X. H., Campbell, C. M., Suarez, E., ... Zhang, Y-H. (2018). High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366830

High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si : H hole-contacts. / Zhao, Yuan; Boccard, Mathieu; Becker, Jacob; Zhao, Xin Hao; Campbell, Calli M.; Suarez, Ernesto; Lassise, Maxwell B.; Holman, Zachary; Zhang, Yong-Hang.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, Y, Boccard, M, Becker, J, Zhao, XH, Campbell, CM, Suarez, E, Lassise, MB, Holman, Z & Zhang, Y-H 2018, High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366830
Zhao Y, Boccard M, Becker J, Zhao XH, Campbell CM, Suarez E et al. High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-3 https://doi.org/10.1109/PVSC.2017.8366830
Zhao, Yuan ; Boccard, Mathieu ; Becker, Jacob ; Zhao, Xin Hao ; Campbell, Calli M. ; Suarez, Ernesto ; Lassise, Maxwell B. ; Holman, Zachary ; Zhang, Yong-Hang. / High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si : H hole-contacts. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-3
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abstract = "High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.",
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AU - Zhao, Xin Hao

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AU - Lassise, Maxwell B.

AU - Holman, Zachary

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