High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts

Yuan Zhao; Mathieu Boccard; Jacob Becker; Xin Hao Zhao; Calli M. Campbell; Ernesto Suarez; Maxwell B. Lassise; Zachary Holman; Yong-Hang Zhang

doi:10.1109/PVSC.2017.8366830

High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts

Yuan Zhao, Mathieu Boccard, Jacob Becker, Xin Hao Zhao, Calli M. Campbell, Ernesto Suarez, Maxwell B. Lassise, Zachary Holman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving V_oc over 1 V. We show high-efficiency monocrystalline CdTe with V_oc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366830
State	Published - May 25 2018
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country	United States
City	Washington
Period	6/25/17 → 6/30/17

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Keywords

Amorphous materials
Cadmium compounds
II-VI semiconductor materials
Photovoltaic cells
Silicon
Thin films

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Zhao, Y., Boccard, M., Becker, J., Zhao, X. H., Campbell, C. M., Suarez, E., Lassise, M. B., Holman, Z., & Zhang, Y-H. (2018). High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366830

High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si : H hole-contacts. / Zhao, Yuan; Boccard, Mathieu; Becker, Jacob; Zhao, Xin Hao; Campbell, Calli M.; Suarez, Ernesto; Lassise, Maxwell B.; Holman, Zachary ; Zhang, Yong-Hang.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, Y, Boccard, M, Becker, J, Zhao, XH, Campbell, CM, Suarez, E, Lassise, MB, Holman, Z & Zhang, Y-H 2018, High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366830

Zhao Y, Boccard M, Becker J, Zhao XH, Campbell CM, Suarez E et al. High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-3 https://doi.org/10.1109/PVSC.2017.8366830

Zhao, Yuan ; Boccard, Mathieu ; Becker, Jacob ; Zhao, Xin Hao ; Campbell, Calli M. ; Suarez, Ernesto ; Lassise, Maxwell B. ; Holman, Zachary ; Zhang, Yong-Hang. / High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si : H hole-contacts. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-3

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abstract = "High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.",

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Access to Document

10.1109/PVSC.2017.8366830