Abstract
High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.
Original language | English (US) |
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Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-3 |
Number of pages | 3 |
ISBN (Electronic) | 9781509056057 |
DOIs | |
State | Published - May 25 2018 |
Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017 |
Other
Other | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
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Country | United States |
City | Washington |
Period | 6/25/17 → 6/30/17 |
Keywords
- Amorphous materials
- Cadmium compounds
- II-VI semiconductor materials
- Photovoltaic cells
- Silicon
- Thin films
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials