Abstract
High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.
| Original language | English (US) |
|---|---|
| Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 3524-3526 |
| Number of pages | 3 |
| Volume | 2016-November |
| ISBN (Electronic) | 9781509027248 |
| DOIs | |
| State | Published - Nov 18 2016 |
| Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016 |
Other
| Other | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
|---|---|
| Country | United States |
| City | Portland |
| Period | 6/5/16 → 6/10/16 |
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Keywords
- amorphous materials
- cadmium compounds
- II-VI semiconductor materials
- photovoltaic cells
- silicon
- thin films
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
Cite this
High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si : H hole-contacts. / Zhao, Yuan; Boccard, Mathieu; Becker, Jacob; Zhao, Xin Hao; Campbell, Calli M.; Suarez, Ernesto; Lassise, Maxwell B.; Holman, Zachary; Zhang, Yong-Hang.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 3524-3526 7750325.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si
T2 - H hole-contacts
AU - Zhao, Yuan
AU - Boccard, Mathieu
AU - Becker, Jacob
AU - Zhao, Xin Hao
AU - Campbell, Calli M.
AU - Suarez, Ernesto
AU - Lassise, Maxwell B.
AU - Holman, Zachary
AU - Zhang, Yong-Hang
PY - 2016/11/18
Y1 - 2016/11/18
N2 - High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.
AB - High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.
KW - amorphous materials
KW - cadmium compounds
KW - II-VI semiconductor materials
KW - photovoltaic cells
KW - silicon
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=85003723283&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85003723283&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2016.7750325
DO - 10.1109/PVSC.2016.7750325
M3 - Conference contribution
VL - 2016-November
SP - 3524
EP - 3526
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -