High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts

Yuan Zhao; Mathieu Boccard; Jacob Becker; Xin Hao Zhao; Calli M. Campbell; Ernesto Suarez; Maxwell B. Lassise; Zachary Holman; Yong-Hang Zhang

doi:10.1109/PVSC.2016.7750325

High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts

Yuan Zhao, Mathieu Boccard, Jacob Becker, Xin Hao Zhao, Calli M. Campbell, Ernesto Suarez, Maxwell B. Lassise, Zachary Holman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving V_oc over 1 V. We show high-efficiency monocrystalline CdTe with V_oc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3524-3526
Number of pages	3
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750325
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

amorphous materials
cadmium compounds
II-VI semiconductor materials
photovoltaic cells
silicon
thin films

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2016.7750325

Cite this

Zhao, Y., Boccard, M., Becker, J., Zhao, X. H., Campbell, C. M., Suarez, E., Lassise, M. B., Holman, Z., & Zhang, Y-H. (2016). High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 3524-3526). [7750325] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750325

High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si : H hole-contacts. / Zhao, Yuan; Boccard, Mathieu; Becker, Jacob et al.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 3524-3526 7750325.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, Y, Boccard, M, Becker, J, Zhao, XH, Campbell, CM, Suarez, E, Lassise, MB, Holman, Z & Zhang, Y-H 2016, High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750325, Institute of Electrical and Electronics Engineers Inc., pp. 3524-3526, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750325

Zhao Y, Boccard M, Becker J, Zhao XH, Campbell CM, Suarez E et al. High built-in potential and V_oc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 3524-3526. 7750325 https://doi.org/10.1109/PVSC.2016.7750325

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abstract = "High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.",

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