Abstract

High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3524-3526
Number of pages3
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Capacitance measurement
Voltage measurement
Fermi level
Heterojunctions
Solar cells
Electric potential

Keywords

  • amorphous materials
  • cadmium compounds
  • II-VI semiconductor materials
  • photovoltaic cells
  • silicon
  • thin films

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Zhao, Y., Boccard, M., Becker, J., Zhao, X. H., Campbell, C. M., Suarez, E., ... Zhang, Y-H. (2016). High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 3524-3526). [7750325] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750325

High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si : H hole-contacts. / Zhao, Yuan; Boccard, Mathieu; Becker, Jacob; Zhao, Xin Hao; Campbell, Calli M.; Suarez, Ernesto; Lassise, Maxwell B.; Holman, Zachary; Zhang, Yong-Hang.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 3524-3526 7750325.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, Y, Boccard, M, Becker, J, Zhao, XH, Campbell, CM, Suarez, E, Lassise, MB, Holman, Z & Zhang, Y-H 2016, High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750325, Institute of Electrical and Electronics Engineers Inc., pp. 3524-3526, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750325
Zhao Y, Boccard M, Becker J, Zhao XH, Campbell CM, Suarez E et al. High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si: H hole-contacts. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 3524-3526. 7750325 https://doi.org/10.1109/PVSC.2016.7750325
Zhao, Yuan ; Boccard, Mathieu ; Becker, Jacob ; Zhao, Xin Hao ; Campbell, Calli M. ; Suarez, Ernesto ; Lassise, Maxwell B. ; Holman, Zachary ; Zhang, Yong-Hang. / High built-in potential and Voc of monocrystalline CdTe/MgCdTe double-heterostructure solar cells with p-type a-Si : H hole-contacts. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 3524-3526
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abstract = "High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.",
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