High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies

Trevor Thornton

doi:10.1109/S3S46989.2019.9320668

High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies

Trevor Thornton

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The high-voltage, high-current, and RF applications of SOI MESFETs are reviewed. Seamless integration of the MESFETs with highly scaled CMOS technologies enables a variety of RF and mixed-signal applications that can be simulated using industry standard device models.

Original language	English (US)
Title of host publication	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728135236
DOIs	https://doi.org/10.1109/S3S46989.2019.9320668
State	Published - Oct 14 2019
Event	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 - San Jose, United States Duration: Oct 14 2019 → Oct 17 2019

Publication series

Name	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019

Conference

Conference	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
Country/Territory	United States
City	San Jose
Period	10/14/19 → 10/17/19

Keywords

CMOS
K-band
MESFETs
TOM3 and Angelov models
power amplifiers
power devices
silicon-on-insulator

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/S3S46989.2019.9320668

Cite this

Thornton, T. (2019). High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies. In 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 Article 9320668 (2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S46989.2019.9320668

High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies. / Thornton, Trevor.
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9320668 (2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Thornton, T 2019, High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies. in 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019., 9320668, 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019, San Jose, United States, 10/14/19. https://doi.org/10.1109/S3S46989.2019.9320668

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abstract = "The high-voltage, high-current, and RF applications of SOI MESFETs are reviewed. Seamless integration of the MESFETs with highly scaled CMOS technologies enables a variety of RF and mixed-signal applications that can be simulated using industry standard device models.",

keywords = "CMOS, K-band, MESFETs, TOM3 and Angelov models, power amplifiers, power devices, silicon-on-insulator",

author = "Trevor Thornton",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 ; Conference date: 14-10-2019 Through 17-10-2019",

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ER -

High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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