High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The high-voltage, high-current, and RF applications of SOI MESFETs are reviewed. Seamless integration of the MESFETs with highly scaled CMOS technologies enables a variety of RF and mixed-signal applications that can be simulated using industry standard device models.

Original languageEnglish (US)
Title of host publication2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728135236
DOIs
StatePublished - Oct 14 2019
Event2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 - San Jose, United States
Duration: Oct 14 2019Oct 17 2019

Publication series

Name2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019

Conference

Conference2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
CountryUnited States
CitySan Jose
Period10/14/1910/17/19

Keywords

  • CMOS
  • K-band
  • MESFETs
  • TOM3 and Angelov models
  • power amplifiers
  • power devices
  • silicon-on-insulator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials

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