High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

Xiaodong Yan, Ivan S. Esqueda, Jiahui Ma, Jesse Tice, Han Wang

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

Original languageEnglish (US)
Article number032101
JournalApplied Physics Letters
Volume112
Issue number3
DOIs
StatePublished - Jan 15 2018
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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