High aspect ratio cylindrical nanopores in silicon-on-insulator substrates

Leo Petrossian; Seth J. Wilk; Punarvasu Joshi; Sahar Hihath; Jonathan D. Posner; Stephen Goodnick; Trevor Thornton

doi:10.1016/j.sse.2007.06.014

High aspect ratio cylindrical nanopores in silicon-on-insulator substrates

Leo Petrossian, Seth J. Wilk, Punarvasu Joshi, Sahar Hihath, Jonathan D. Posner, Stephen Goodnick, Trevor Thornton

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The electrolyte concentration dependence of ion transport through a single nanopore was measured over the range of 0.316 mM to 1 M. Experimentally measured values follow the bulk linear behavior at high concentrations but deviate from the simple model at lower concentrations. These deviations were modeled using a surface charge conduction mechanism.

Original language	English (US)
Pages (from-to)	1391-1397
Number of pages	7
Journal	Solid-State Electronics
Volume	51
Issue number	10 SPEC. ISS
DOIs	https://doi.org/10.1016/j.sse.2007.06.014
State	Published - Oct 2007

Keywords

Coulter counting
Ion channel
Nanopore
Patch-clamp
Silicon-on-insulator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2007.06.014

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title = "High aspect ratio cylindrical nanopores in silicon-on-insulator substrates",

abstract = "Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The electrolyte concentration dependence of ion transport through a single nanopore was measured over the range of 0.316 mM to 1 M. Experimentally measured values follow the bulk linear behavior at high concentrations but deviate from the simple model at lower concentrations. These deviations were modeled using a surface charge conduction mechanism.",

keywords = "Coulter counting, Ion channel, Nanopore, Patch-clamp, Silicon-on-insulator",

author = "Leo Petrossian and Wilk, {Seth J.} and Punarvasu Joshi and Sahar Hihath and Posner, {Jonathan D.} and Stephen Goodnick and Trevor Thornton",

note = "Funding Information: This research was supported by the DARPA Defense Sciences Office as part of the MOLDICE Project. Partial student funding was provided by the National Science Foundation as part of the Arizona State University Bio-Molecular Nanotechnology IGERT program. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

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language = "English (US)",

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AU - Petrossian, Leo

AU - Wilk, Seth J.

AU - Joshi, Punarvasu

AU - Hihath, Sahar

AU - Posner, Jonathan D.

AU - Goodnick, Stephen

AU - Thornton, Trevor

N1 - Funding Information: This research was supported by the DARPA Defense Sciences Office as part of the MOLDICE Project. Partial student funding was provided by the National Science Foundation as part of the Arizona State University Bio-Molecular Nanotechnology IGERT program. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2007/10

Y1 - 2007/10

N2 - Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The electrolyte concentration dependence of ion transport through a single nanopore was measured over the range of 0.316 mM to 1 M. Experimentally measured values follow the bulk linear behavior at high concentrations but deviate from the simple model at lower concentrations. These deviations were modeled using a surface charge conduction mechanism.

AB - Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The electrolyte concentration dependence of ion transport through a single nanopore was measured over the range of 0.316 mM to 1 M. Experimentally measured values follow the bulk linear behavior at high concentrations but deviate from the simple model at lower concentrations. These deviations were modeled using a surface charge conduction mechanism.

KW - Coulter counting

KW - Ion channel

KW - Nanopore

KW - Patch-clamp

KW - Silicon-on-insulator

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JF - Solid-State Electronics

SN - 0038-1101

IS - 10 SPEC. ISS

ER -

High aspect ratio cylindrical nanopores in silicon-on-insulator substrates

Abstract

Keywords

ASJC Scopus subject areas

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