Abstract
Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The electrolyte concentration dependence of ion transport through a single nanopore was measured over the range of 0.316 mM to 1 M. Experimentally measured values follow the bulk linear behavior at high concentrations but deviate from the simple model at lower concentrations. These deviations were modeled using a surface charge conduction mechanism.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1391-1397 |
| Number of pages | 7 |
| Journal | Solid-State Electronics |
| Volume | 51 |
| Issue number | 10 SPEC. ISS |
| DOIs | |
| State | Published - Oct 2007 |
Keywords
- Coulter counting
- Ion channel
- Nanopore
- Patch-clamp
- Silicon-on-insulator
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Petrossian, L., Wilk, S. J., Joshi, P., Hihath, S., Posner, J. D., Goodnick, S., & Thornton, T. (2007). High aspect ratio cylindrical nanopores in silicon-on-insulator substrates. Solid-State Electronics, 51(10 SPEC. ISS), 1391-1397. https://doi.org/10.1016/j.sse.2007.06.014