The high-angle annular dark-field (HAADF) technique of scanning transmission electron microscopy (STEM) has been applied to the study of Mo/Si multilayer structures fabricated by e-beam evaporation and sputtering under various growth conditions. Comparison with bright-field STEM images confirms that the HAADF technique can give high-resolution imaging contrast which is sensitive to the atomic number of the scatterer and is free of the complications of dynamical scattering and coherent interference effects which are limitations of the bright-field electron microscopy. The HAADF images allow compositional distributions to be drawn concerning the sharpness of the interfaces between the layers. A method for quantifying the compositional variations across the layers is proposed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics