High-angle annular dark-field microscopy of Mo/Si multilayer structures

Jingyue Liu; Y. Cheng; J. M. Cowley; M. B. Stearns

doi:10.1016/0304-3991(92)90132-4

High-angle annular dark-field microscopy of Mo/Si multilayer structures

Jingyue Liu, Y. Cheng, J. M. Cowley, M. B. Stearns

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The high-angle annular dark-field (HAADF) technique of scanning transmission electron microscopy (STEM) has been applied to the study of Mo/Si multilayer structures fabricated by e-beam evaporation and sputtering under various growth conditions. Comparison with bright-field STEM images confirms that the HAADF technique can give high-resolution imaging contrast which is sensitive to the atomic number of the scatterer and is free of the complications of dynamical scattering and coherent interference effects which are limitations of the bright-field electron microscopy. The HAADF images allow compositional distributions to be drawn concerning the sharpness of the interfaces between the layers. A method for quantifying the compositional variations across the layers is proposed.

Original language	English (US)
Pages (from-to)	352-364
Number of pages	13
Journal	Ultramicroscopy
Volume	40
Issue number	3
DOIs	https://doi.org/10.1016/0304-3991(92)90132-4
State	Published - Mar 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/0304-3991(92)90132-4

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@article{266196273052458182f7769a95a7cc2d,

title = "High-angle annular dark-field microscopy of Mo/Si multilayer structures",

abstract = "The high-angle annular dark-field (HAADF) technique of scanning transmission electron microscopy (STEM) has been applied to the study of Mo/Si multilayer structures fabricated by e-beam evaporation and sputtering under various growth conditions. Comparison with bright-field STEM images confirms that the HAADF technique can give high-resolution imaging contrast which is sensitive to the atomic number of the scatterer and is free of the complications of dynamical scattering and coherent interference effects which are limitations of the bright-field electron microscopy. The HAADF images allow compositional distributions to be drawn concerning the sharpness of the interfaces between the layers. A method for quantifying the compositional variations across the layers is proposed.",

author = "Jingyue Liu and Y. Cheng and Cowley, {J. M.} and Stearns, {M. B.}",

note = "Funding Information: The authors thank Mr. A. Higgs for technical assistance. One of the authors (J. Liu) acknowledges partial support from the Shell Development Company. We thank Dr. D.G. Stearns of LLNL for providing the sputtered Mo/Si ML sample. This work was supported by NSF grant 88-10238 and made use of the ASU Facility for HREM supported by NSF grant DMR 89-13384. The ML fabrication was supported in part by the NSF grant DMR 8610863a nd by LLNL, through the US department of Energy contract No. W-7405-Eng-48.",

year = "1992",

month = mar,

doi = "10.1016/0304-3991(92)90132-4",

language = "English (US)",

volume = "40",

pages = "352--364",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - High-angle annular dark-field microscopy of Mo/Si multilayer structures

AU - Liu, Jingyue

AU - Cheng, Y.

AU - Cowley, J. M.

AU - Stearns, M. B.

N1 - Funding Information: The authors thank Mr. A. Higgs for technical assistance. One of the authors (J. Liu) acknowledges partial support from the Shell Development Company. We thank Dr. D.G. Stearns of LLNL for providing the sputtered Mo/Si ML sample. This work was supported by NSF grant 88-10238 and made use of the ASU Facility for HREM supported by NSF grant DMR 89-13384. The ML fabrication was supported in part by the NSF grant DMR 8610863a nd by LLNL, through the US department of Energy contract No. W-7405-Eng-48.

PY - 1992/3

Y1 - 1992/3

N2 - The high-angle annular dark-field (HAADF) technique of scanning transmission electron microscopy (STEM) has been applied to the study of Mo/Si multilayer structures fabricated by e-beam evaporation and sputtering under various growth conditions. Comparison with bright-field STEM images confirms that the HAADF technique can give high-resolution imaging contrast which is sensitive to the atomic number of the scatterer and is free of the complications of dynamical scattering and coherent interference effects which are limitations of the bright-field electron microscopy. The HAADF images allow compositional distributions to be drawn concerning the sharpness of the interfaces between the layers. A method for quantifying the compositional variations across the layers is proposed.

AB - The high-angle annular dark-field (HAADF) technique of scanning transmission electron microscopy (STEM) has been applied to the study of Mo/Si multilayer structures fabricated by e-beam evaporation and sputtering under various growth conditions. Comparison with bright-field STEM images confirms that the HAADF technique can give high-resolution imaging contrast which is sensitive to the atomic number of the scatterer and is free of the complications of dynamical scattering and coherent interference effects which are limitations of the bright-field electron microscopy. The HAADF images allow compositional distributions to be drawn concerning the sharpness of the interfaces between the layers. A method for quantifying the compositional variations across the layers is proposed.

UR - http://www.scopus.com/inward/record.url?scp=0026832937&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026832937&partnerID=8YFLogxK

U2 - 10.1016/0304-3991(92)90132-4

DO - 10.1016/0304-3991(92)90132-4

M3 - Article

AN - SCOPUS:0026832937

SN - 0304-3991

VL - 40

SP - 352

EP - 364

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 3

ER -

High-angle annular dark-field microscopy of Mo/Si multilayer structures

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