High-angle annular dark-field microscopy of Mo/Si multilayer structures

Jingyue Liu, Y. Cheng, J. M. Cowley, M. B. Stearns

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The high-angle annular dark-field (HAADF) technique of scanning transmission electron microscopy (STEM) has been applied to the study of Mo/Si multilayer structures fabricated by e-beam evaporation and sputtering under various growth conditions. Comparison with bright-field STEM images confirms that the HAADF technique can give high-resolution imaging contrast which is sensitive to the atomic number of the scatterer and is free of the complications of dynamical scattering and coherent interference effects which are limitations of the bright-field electron microscopy. The HAADF images allow compositional distributions to be drawn concerning the sharpness of the interfaces between the layers. A method for quantifying the compositional variations across the layers is proposed.

Original languageEnglish (US)
Pages (from-to)352-364
Number of pages13
JournalUltramicroscopy
Volume40
Issue number3
DOIs
StatePublished - 1992

Fingerprint

laminates
Microscopic examination
Multilayers
Transmission electron microscopy
microscopy
Scanning electron microscopy
Electron microscopy
Sputtering
transmission electron microscopy
Evaporation
scanning electron microscopy
sharpness
Scattering
scattering
Imaging techniques
electron microscopy
sputtering
evaporation
interference
high resolution

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

High-angle annular dark-field microscopy of Mo/Si multilayer structures. / Liu, Jingyue; Cheng, Y.; Cowley, J. M.; Stearns, M. B.

In: Ultramicroscopy, Vol. 40, No. 3, 1992, p. 352-364.

Research output: Contribution to journalArticle

Liu, Jingyue ; Cheng, Y. ; Cowley, J. M. ; Stearns, M. B. / High-angle annular dark-field microscopy of Mo/Si multilayer structures. In: Ultramicroscopy. 1992 ; Vol. 40, No. 3. pp. 352-364.
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