High angle annular dark field imaging of stacking faults

A. Amali, Peter Rez, J. M. Cowley

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

High angle annular dark field imaging has been extensively applied to high resolution imaging of crystalline materials. Dislocations have also been imaged using the high angle dark field detector, even when the lattice has not been directly resolved. Diffraction contrast, as employed in transmission electron microscopy analysis of defects, is a possible mechanism for dislocation contrast. Stacking faults should also show diffraction contrast and a Bloch wave theory is developed for the high angle dark field image. The results are compared with an experiment which shows, in agreement with the theory, that the strongest contrast is found when the fault is close to the surface and the objective aperture is small.

Original languageEnglish (US)
Pages (from-to)89-94
Number of pages6
JournalMicron
Volume28
Issue number2
DOIs
StatePublished - Apr 1997

Fingerprint

Stacking faults
Transmission Electron Microscopy
Dislocations (crystals)
crystal defects
Diffraction
Imaging techniques
Crystalline materials
Transmission electron microscopy
Detectors
Defects
diffraction
apertures
Experiments
transmission electron microscopy
high resolution
detectors
defects

ASJC Scopus subject areas

  • Cell Biology
  • Materials Science(all)
  • Instrumentation

Cite this

High angle annular dark field imaging of stacking faults. / Amali, A.; Rez, Peter; Cowley, J. M.

In: Micron, Vol. 28, No. 2, 04.1997, p. 89-94.

Research output: Contribution to journalArticle

Amali, A. ; Rez, Peter ; Cowley, J. M. / High angle annular dark field imaging of stacking faults. In: Micron. 1997 ; Vol. 28, No. 2. pp. 89-94.
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