HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

Hong Yu Chen; Shimeng Yu; Bin Gao; Peng Huang; Jinfeng Kang; H. S.Philip Wong

doi:10.1109/IEDM.2012.6479083

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

Hong Yu Chen, Shimeng Yu, Bin Gao, Peng Huang, Jinfeng Kang, H. S.Philip Wong

Arizona State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

95 Scopus citations

Abstract

Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface engineering using TiON layer results in non-linear I-V suitable for the selector-less array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50μA), switching speed (∼50ns), switching endurance (>10⁸ cycles), half-selected read disturbance immunity (>10⁹ cycles), retention (>10⁵s @125 ^oC). Moreover, a unique write/read scheme is proposed for 3D cross-point architecture. Analysis shows that for such 3D selector-less array, a large R_on (∼100k) from the non-linear I-V helps reduce the sneak path current, and a low interconnect resistance using metal planes as word lines reduces the undesirable voltage drop on the interconnect. As a conservative estimate, simulation shows that Mb-scale array without cell selector is achievable.

Original language	English (US)
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	20.7.1-20.7.4
ISBN (Print)	9781467348706
DOIs	https://doi.org/10.1109/IEDM.2012.6479083
State	Published - 2012
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: Dec 10 2012 → Dec 13 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/10/12 → 12/13/12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2012.6479083

Cite this

Chen, H. Y., Yu, S., Gao, B., Huang, P., Kang, J., & Wong, H. S. P. (2012). HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 20.7.1-20.7.4). Article 6479083 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2012.6479083

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. / Chen, Hong Yu; Yu, Shimeng; Gao, Bin et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. Institute of Electrical and Electronics Engineers Inc., 2012. p. 20.7.1-20.7.4 6479083 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, HY, Yu, S, Gao, B, Huang, P, Kang, J & Wong, HSP 2012, HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479083, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 20.7.1-20.7.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6479083

Chen HY, Yu S, Gao B, Huang P, Kang J, Wong HSP. HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. In 2012 IEEE International Electron Devices Meeting, IEDM 2012. Institute of Electrical and Electronics Engineers Inc. 2012. p. 20.7.1-20.7.4. 6479083. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2012.6479083

Chen, Hong Yu ; Yu, Shimeng ; Gao, Bin et al. / HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. 2012 IEEE International Electron Devices Meeting, IEDM 2012. Institute of Electrical and Electronics Engineers Inc., 2012. pp. 20.7.1-20.7.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

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