HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

Hong Yu Chen, Shimeng Yu, Bin Gao, Peng Huang, Jinfeng Kang, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

50 Scopus citations

Abstract

Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface engineering using TiON layer results in non-linear I-V suitable for the selector-less array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50μA), switching speed (∼50ns), switching endurance (>108 cycles), half-selected read disturbance immunity (>109 cycles), retention (>105s @125 oC). Moreover, a unique write/read scheme is proposed for 3D cross-point architecture. Analysis shows that for such 3D selector-less array, a large Ron (∼100k) from the non-linear I-V helps reduce the sneak path current, and a low interconnect resistance using metal planes as word lines reduces the undesirable voltage drop on the interconnect. As a conservative estimate, simulation shows that Mb-scale array without cell selector is achievable.

Original languageEnglish (US)
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages20.7.1-20.7.4
ISBN (Print)9781467348706
DOIs
StatePublished - Jan 1 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chen, H. Y., Yu, S., Gao, B., Huang, P., Kang, J., & Wong, H. S. P. (2012). HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 20.7.1-20.7.4). [6479083] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2012.6479083