HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

Hong Yu Chen, Shimeng Yu, Bin Gao, Peng Huang, Jinfeng Kang, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

45 Citations (Scopus)

Abstract

Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface engineering using TiON layer results in non-linear I-V suitable for the selector-less array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50μA), switching speed (∼50ns), switching endurance (>108 cycles), half-selected read disturbance immunity (>109 cycles), retention (>105s @125 oC). Moreover, a unique write/read scheme is proposed for 3D cross-point architecture. Analysis shows that for such 3D selector-less array, a large Ron (∼100k) from the non-linear I-V helps reduce the sneak path current, and a low interconnect resistance using metal planes as word lines reduces the undesirable voltage drop on the interconnect. As a conservative estimate, simulation shows that Mb-scale array without cell selector is achievable.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 2012
Externally publishedYes
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

Fingerprint

selectors
random access memory
costs
Data storage equipment
cells
Oxides
Costs
cycles
Metals
immunity
Fabrication
Electrodes
disturbances
engineering
fabrication
electrodes
oxides
electric potential
estimates
metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Chen, H. Y., Yu, S., Gao, B., Huang, P., Kang, J., & Wong, H. S. P. (2012). HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. In Technical Digest - International Electron Devices Meeting, IEDM [6479083] https://doi.org/10.1109/IEDM.2012.6479083

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. / Chen, Hong Yu; Yu, Shimeng; Gao, Bin; Huang, Peng; Kang, Jinfeng; Wong, H. S Philip.

Technical Digest - International Electron Devices Meeting, IEDM. 2012. 6479083.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, HY, Yu, S, Gao, B, Huang, P, Kang, J & Wong, HSP 2012, HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. in Technical Digest - International Electron Devices Meeting, IEDM., 6479083, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6479083
Chen HY, Yu S, Gao B, Huang P, Kang J, Wong HSP. HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. In Technical Digest - International Electron Devices Meeting, IEDM. 2012. 6479083 https://doi.org/10.1109/IEDM.2012.6479083
Chen, Hong Yu ; Yu, Shimeng ; Gao, Bin ; Huang, Peng ; Kang, Jinfeng ; Wong, H. S Philip. / HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector. Technical Digest - International Electron Devices Meeting, IEDM. 2012.
@inproceedings{f3eb15a7391848009572d45eca722472,
title = "HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector",
abstract = "Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface engineering using TiON layer results in non-linear I-V suitable for the selector-less array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50μA), switching speed (∼50ns), switching endurance (>108 cycles), half-selected read disturbance immunity (>109 cycles), retention (>105s @125 oC). Moreover, a unique write/read scheme is proposed for 3D cross-point architecture. Analysis shows that for such 3D selector-less array, a large Ron (∼100k) from the non-linear I-V helps reduce the sneak path current, and a low interconnect resistance using metal planes as word lines reduces the undesirable voltage drop on the interconnect. As a conservative estimate, simulation shows that Mb-scale array without cell selector is achievable.",
author = "Chen, {Hong Yu} and Shimeng Yu and Bin Gao and Peng Huang and Jinfeng Kang and Wong, {H. S Philip}",
year = "2012",
doi = "10.1109/IEDM.2012.6479083",
language = "English (US)",
isbn = "9781467348706",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

}

TY - GEN

T1 - HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

AU - Chen, Hong Yu

AU - Yu, Shimeng

AU - Gao, Bin

AU - Huang, Peng

AU - Kang, Jinfeng

AU - Wong, H. S Philip

PY - 2012

Y1 - 2012

N2 - Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface engineering using TiON layer results in non-linear I-V suitable for the selector-less array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50μA), switching speed (∼50ns), switching endurance (>108 cycles), half-selected read disturbance immunity (>109 cycles), retention (>105s @125 oC). Moreover, a unique write/read scheme is proposed for 3D cross-point architecture. Analysis shows that for such 3D selector-less array, a large Ron (∼100k) from the non-linear I-V helps reduce the sneak path current, and a low interconnect resistance using metal planes as word lines reduces the undesirable voltage drop on the interconnect. As a conservative estimate, simulation shows that Mb-scale array without cell selector is achievable.

AB - Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface engineering using TiON layer results in non-linear I-V suitable for the selector-less array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50μA), switching speed (∼50ns), switching endurance (>108 cycles), half-selected read disturbance immunity (>109 cycles), retention (>105s @125 oC). Moreover, a unique write/read scheme is proposed for 3D cross-point architecture. Analysis shows that for such 3D selector-less array, a large Ron (∼100k) from the non-linear I-V helps reduce the sneak path current, and a low interconnect resistance using metal planes as word lines reduces the undesirable voltage drop on the interconnect. As a conservative estimate, simulation shows that Mb-scale array without cell selector is achievable.

UR - http://www.scopus.com/inward/record.url?scp=84876142491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876142491&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2012.6479083

DO - 10.1109/IEDM.2012.6479083

M3 - Conference contribution

SN - 9781467348706

BT - Technical Digest - International Electron Devices Meeting, IEDM

ER -