HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture

Shimeng Yu, Hong Yu Chen, Bin Gao, Jinfeng Kang, H. S Philip Wong

Research output: Contribution to journalArticle

200 Citations (Scopus)

Abstract

The three-dimensional (3D) cross-point array architecture is attractive for future ultra-high-density nonvolatile memory application. A bit-cost-effective technology path toward the 3D integration that requires only one critical lithography step or mask for reducing the bit-cost is demonstrated in this work. A double-layer HfOx-based vertical resistive switching random access memory (RRAM) is fabricated and characterized. The HfOx thin film is deposited at the sidewall of the predefined trench by atomic layer deposition, forming a vertical memory structure. Electrode/oxide interface engineering with a TiON interfacial layer results in nonlinear I-V suitable for the selectorless array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50 μA), switching speed (<100 ns), switching endurance (>108 cycles), read disturbance immunity (>10 9 cycles), and data retention time (>105 s @ 125 C).

Original languageEnglish (US)
Pages (from-to)2320-2325
Number of pages6
JournalACS Nano
Volume7
Issue number3
DOIs
StatePublished - Mar 26 2013
Externally publishedYes

Fingerprint

random access memory
costs
Data storage equipment
cycles
immunity
atomic layer epitaxy
Costs
disturbances
masks
lithography
engineering
electrodes
oxides
Atomic layer deposition
thin films
Oxides
Lithography
Interfaces (computer)
Masks
Thin films

Keywords

  • 3D integration
  • bit-cost-effective
  • cross-point array
  • HfO
  • resistive switching
  • RRAM

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. / Yu, Shimeng; Chen, Hong Yu; Gao, Bin; Kang, Jinfeng; Wong, H. S Philip.

In: ACS Nano, Vol. 7, No. 3, 26.03.2013, p. 2320-2325.

Research output: Contribution to journalArticle

Yu, Shimeng ; Chen, Hong Yu ; Gao, Bin ; Kang, Jinfeng ; Wong, H. S Philip. / HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. In: ACS Nano. 2013 ; Vol. 7, No. 3. pp. 2320-2325.
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