Abstract
The three-dimensional (3D) cross-point array architecture is attractive for future ultra-high-density nonvolatile memory application. A bit-cost-effective technology path toward the 3D integration that requires only one critical lithography step or mask for reducing the bit-cost is demonstrated in this work. A double-layer HfOx-based vertical resistive switching random access memory (RRAM) is fabricated and characterized. The HfOx thin film is deposited at the sidewall of the predefined trench by atomic layer deposition, forming a vertical memory structure. Electrode/oxide interface engineering with a TiON interfacial layer results in nonlinear I-V suitable for the selectorless array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50 μA), switching speed (<100 ns), switching endurance (>108 cycles), read disturbance immunity (>10 9 cycles), and data retention time (>105 s @ 125 C).
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2320-2325 |
| Number of pages | 6 |
| Journal | ACS Nano |
| Volume | 7 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 26 2013 |
| Externally published | Yes |
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Keywords
- 3D integration
- bit-cost-effective
- cross-point array
- HfO
- resistive switching
- RRAM
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. / Yu, Shimeng; Chen, Hong Yu; Gao, Bin; Kang, Jinfeng; Wong, H. S Philip.
In: ACS Nano, Vol. 7, No. 3, 26.03.2013, p. 2320-2325.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture
AU - Yu, Shimeng
AU - Chen, Hong Yu
AU - Gao, Bin
AU - Kang, Jinfeng
AU - Wong, H. S Philip
PY - 2013/3/26
Y1 - 2013/3/26
N2 - The three-dimensional (3D) cross-point array architecture is attractive for future ultra-high-density nonvolatile memory application. A bit-cost-effective technology path toward the 3D integration that requires only one critical lithography step or mask for reducing the bit-cost is demonstrated in this work. A double-layer HfOx-based vertical resistive switching random access memory (RRAM) is fabricated and characterized. The HfOx thin film is deposited at the sidewall of the predefined trench by atomic layer deposition, forming a vertical memory structure. Electrode/oxide interface engineering with a TiON interfacial layer results in nonlinear I-V suitable for the selectorless array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50 μA), switching speed (<100 ns), switching endurance (>108 cycles), read disturbance immunity (>10 9 cycles), and data retention time (>105 s @ 125 C).
AB - The three-dimensional (3D) cross-point array architecture is attractive for future ultra-high-density nonvolatile memory application. A bit-cost-effective technology path toward the 3D integration that requires only one critical lithography step or mask for reducing the bit-cost is demonstrated in this work. A double-layer HfOx-based vertical resistive switching random access memory (RRAM) is fabricated and characterized. The HfOx thin film is deposited at the sidewall of the predefined trench by atomic layer deposition, forming a vertical memory structure. Electrode/oxide interface engineering with a TiON interfacial layer results in nonlinear I-V suitable for the selectorless array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50 μA), switching speed (<100 ns), switching endurance (>108 cycles), read disturbance immunity (>10 9 cycles), and data retention time (>105 s @ 125 C).
KW - 3D integration
KW - bit-cost-effective
KW - cross-point array
KW - HfO
KW - resistive switching
KW - RRAM
UR - http://www.scopus.com/inward/record.url?scp=84875674680&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875674680&partnerID=8YFLogxK
U2 - 10.1021/nn305510u
DO - 10.1021/nn305510u
M3 - Article
C2 - 23411406
AN - SCOPUS:84875674680
VL - 7
SP - 2320
EP - 2325
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 3
ER -