HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture

Shimeng Yu, Hong Yu Chen, Bin Gao, Jinfeng Kang, H. S.Philip Wong

Research output: Contribution to journalArticle

217 Scopus citations

Abstract

The three-dimensional (3D) cross-point array architecture is attractive for future ultra-high-density nonvolatile memory application. A bit-cost-effective technology path toward the 3D integration that requires only one critical lithography step or mask for reducing the bit-cost is demonstrated in this work. A double-layer HfOx-based vertical resistive switching random access memory (RRAM) is fabricated and characterized. The HfOx thin film is deposited at the sidewall of the predefined trench by atomic layer deposition, forming a vertical memory structure. Electrode/oxide interface engineering with a TiON interfacial layer results in nonlinear I-V suitable for the selectorless array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50 μA), switching speed (<100 ns), switching endurance (>108 cycles), read disturbance immunity (>10 9 cycles), and data retention time (>105 s @ 125 C).

Original languageEnglish (US)
Pages (from-to)2320-2325
Number of pages6
JournalACS nano
Volume7
Issue number3
DOIs
StatePublished - Mar 26 2013

Keywords

  • 3D integration
  • HfO
  • RRAM
  • bit-cost-effective
  • cross-point array
  • resistive switching

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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