HF Vapor Developed Chemical Amplified Oxide Resists

Pattern definition in integrated circuit fabrication is normally achieved using photoresist as the image transfer element. There are a number of problems associated with current photoresist technologies. Researchers at Arizona State University have developed new imaging technology which would permit semiconductor manufacturers to define structures below .25 microns. The technology eliminates issues relating to resist depth, substance efforts, and wet developers. This technology may be employed for either negatively or positively patterned oxide layers. Additionally, the utilization of chemically enhanced vapor etching can also allow preferential etching in a controlled manner.