Hexagonal boron nitride (h-BN) memristor arrays for analog-based machine learning hardware

Jing Xie, Sahra Afshari, Ivan Sanchez Esqueda

Research output: Contribution to journalArticlepeer-review

Abstract

Recent studies of resistive switching devices with hexagonal boron nitride (h-BN) as the switching layer have shown the potential of two-dimensional (2D) materials for memory and neuromorphic computing applications. The use of 2D materials allows scaling the resistive switching layer thickness to sub-nanometer dimensions enabling devices to operate with low switching voltages and high programming speeds, offering large improvements in efficiency and performance as well as ultra-dense integration. These characteristics are of interest for the implementation of neuromorphic computing and machine learning hardware based on memristor crossbars. However, existing demonstrations of h-BN memristors focus on single isolated device switching properties and lack attention to fundamental machine learning functions. This paper demonstrates the hardware implementation of dot product operations, a basic analog function ubiquitous in machine learning, using h-BN memristor arrays. Moreover, we demonstrate the hardware implementation of a linear regression algorithm on h-BN memristor arrays.

Original languageEnglish (US)
Article number50
Journalnpj 2D Materials and Applications
Volume6
Issue number1
DOIs
StatePublished - Dec 2022
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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