This chapter discusses the latest progress in molecular beam epitaxy (MBE) growth and characterization of a versatile material platform: II–VI (MgZnCd)(SeTe) and III–V (AlGaIn)(PAsSb) semiconductor materials lattice‐matched to GaAs, GaSb, InAs, and InSb substrates, and their device applications. These materials have small thermal mismatches and direct bandgaps covering a very broad energy spectrum from far infrared (IR, ∼0 eV) to ultraviolet (UV, ∼3.4 eV). Such a unique material platform offers opportunities to study new physics such as topological insulation in heterovalent superlattices and facilitates monolithic integration of various materials without misfit dislocations, which are highly desirable for device applications such as light‐emitting diodes (LEDs), lasers, solar cells, photodetectors, X‐ray sensors, resonant tunneling diodes, and so on.
|Original language||English (US)|
|Title of host publication||Molecular Beam Epitaxy|
|Subtitle of host publication||Materials and Applications for Electronics and Optoelectronics|
|Number of pages||19|
|State||Published - Jan 1 2019|
ASJC Scopus subject areas
- Physics and Astronomy(all)