Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts

Sandip Tiwari, Alyce Ginzberg, Salman Akhtar, Steven L. Wright, Ronald F. Marks, Young H. Kwark, Richard Kiehl

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

We describe the use of a p-type refractory ohmic contact in ohmic self-aligned devices. The contacts are based on self-aligned diffusion of zinc-doped tungsten film. The diffusion is nearly isotropic in the vicinity of silicon nitride sidewalls, allowing self-alignment of ohmic contacts with emitters and gates. Lowresistance contacts (< 10-6 Ω. cm2) are formed both to GaAs and GaAIAs, and the lifetime of the diffused region is superior to that obtained from implantation. Heterostructure bipolar transistors (HBT's) showing high current gains (≥50 at 2 x 103 A.cm-2 and ≥200 at 1 x 105 A.cm-2 with micrometer-sized emitter widths) and p-channel GaAs gate heterostructure field-effect transistors (HFET's) showing high transconductances (78 mS/mm at 2.2-μm gate length) have been fabricated using this contact.

Original languageEnglish (US)
Pages (from-to)422-424
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number8
DOIs
StatePublished - Aug 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Tiwari, S., Ginzberg, A., Akhtar, S., Wright, S. L., Marks, R. F., Kwark, Y. H., & Kiehl, R. (1988). Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts. IEEE Electron Device Letters, 9(8), 422-424. https://doi.org/10.1109/55.765