Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts

Sandip Tiwari, Alyce Ginzberg, Salman Akhtar, Steven L. Wright, Ronald F. Marks, Young H. Kwark, Richard Kiehl

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We describe the use of a p-type refractory ohmic contact in ohmic self-aligned devices. The contacts are based on self-aligned diffusion of zinc-doped tungsten film. The diffusion is nearly isotropic in the vicinity of silicon nitride sidewalls, allowing self-alignment of ohmic contacts with emitters and gates. Lowresistance contacts (<10-6 Ω. cm2) are formed both to GaAs and GaAIAs, and the lifetime of the diffused region is superior to that obtained from implantation. Heterostructure bipolar transistors (HBT's) showing high current gains (≥50 at 2 x 103 A.cm-2 and ≥200 at 1 x 105 A.cm-2 with micrometer-sized emitter widths) and p-channel GaAs gate heterostructure field-effect transistors (HFET's) showing high transconductances (78 mS/mm at 2.2-μm gate length) have been fabricated using this contact.

Original languageEnglish (US)
Pages (from-to)422-424
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number8
DOIs
StatePublished - 1988
Externally publishedYes

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Ohmic contacts
Heterojunctions
Tungsten
Bipolar transistors
Transconductance
High electron mobility transistors
Silicon nitride
Refractory materials
Zinc
gallium arsenide
silicon nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

Cite this

Tiwari, S., Ginzberg, A., Akhtar, S., Wright, S. L., Marks, R. F., Kwark, Y. H., & Kiehl, R. (1988). Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts. IEEE Electron Device Letters, 9(8), 422-424. https://doi.org/10.1109/55.765

Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts. / Tiwari, Sandip; Ginzberg, Alyce; Akhtar, Salman; Wright, Steven L.; Marks, Ronald F.; Kwark, Young H.; Kiehl, Richard.

In: IEEE Electron Device Letters, Vol. 9, No. 8, 1988, p. 422-424.

Research output: Contribution to journalArticle

Tiwari, S, Ginzberg, A, Akhtar, S, Wright, SL, Marks, RF, Kwark, YH & Kiehl, R 1988, 'Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts', IEEE Electron Device Letters, vol. 9, no. 8, pp. 422-424. https://doi.org/10.1109/55.765
Tiwari S, Ginzberg A, Akhtar S, Wright SL, Marks RF, Kwark YH et al. Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts. IEEE Electron Device Letters. 1988;9(8):422-424. https://doi.org/10.1109/55.765
Tiwari, Sandip ; Ginzberg, Alyce ; Akhtar, Salman ; Wright, Steven L. ; Marks, Ronald F. ; Kwark, Young H. ; Kiehl, Richard. / Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts. In: IEEE Electron Device Letters. 1988 ; Vol. 9, No. 8. pp. 422-424.
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