Heterojunction FETs in III-V compounds

Richard Kiehl, P. M. Solomon, D. J. Frank

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We review work on heterojunction FETs (HFETs) fabricated from III-V compounds, with emphasis on the unique properties of such devices and their applicability to high-speed logic circuits. After discussing their general properties, including their uniquely high carrier mobility and fast switching speed, we discuss HFETs investigated at the IBM Thomas J. Watson Research Center, i.e., the semiconductor-insulator-semiconductor FET (SISFET) and quantum-well metal-insulator-semiconductor FET (QW-MISFET) - and their possible circuit applications. Finally, the opportunities for achieving a circuit performance level beyond that offered by the GaAs-(Al, Ga)As materials system are explored.

Original languageEnglish (US)
Pages (from-to)506-529
Number of pages24
JournalIBM Journal of Research and Development
Volume34
Issue number4
StatePublished - Jul 1990
Externally publishedYes

Fingerprint

Field effect transistors
Heterojunctions
Semiconductor materials
Networks (circuits)
Logic circuits
Carrier mobility
Semiconductor quantum wells
Metals

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Kiehl, R., Solomon, P. M., & Frank, D. J. (1990). Heterojunction FETs in III-V compounds. IBM Journal of Research and Development, 34(4), 506-529.

Heterojunction FETs in III-V compounds. / Kiehl, Richard; Solomon, P. M.; Frank, D. J.

In: IBM Journal of Research and Development, Vol. 34, No. 4, 07.1990, p. 506-529.

Research output: Contribution to journalArticle

Kiehl, R, Solomon, PM & Frank, DJ 1990, 'Heterojunction FETs in III-V compounds', IBM Journal of Research and Development, vol. 34, no. 4, pp. 506-529.
Kiehl, Richard ; Solomon, P. M. ; Frank, D. J. / Heterojunction FETs in III-V compounds. In: IBM Journal of Research and Development. 1990 ; Vol. 34, No. 4. pp. 506-529.
@article{96b49dfd6da2473793b6b54ede54da70,
title = "Heterojunction FETs in III-V compounds",
abstract = "We review work on heterojunction FETs (HFETs) fabricated from III-V compounds, with emphasis on the unique properties of such devices and their applicability to high-speed logic circuits. After discussing their general properties, including their uniquely high carrier mobility and fast switching speed, we discuss HFETs investigated at the IBM Thomas J. Watson Research Center, i.e., the semiconductor-insulator-semiconductor FET (SISFET) and quantum-well metal-insulator-semiconductor FET (QW-MISFET) - and their possible circuit applications. Finally, the opportunities for achieving a circuit performance level beyond that offered by the GaAs-(Al, Ga)As materials system are explored.",
author = "Richard Kiehl and Solomon, {P. M.} and Frank, {D. J.}",
year = "1990",
month = "7",
language = "English (US)",
volume = "34",
pages = "506--529",
journal = "IBM Journal of Research and Development",
issn = "0018-8646",
publisher = "IBM Corporation",
number = "4",

}

TY - JOUR

T1 - Heterojunction FETs in III-V compounds

AU - Kiehl, Richard

AU - Solomon, P. M.

AU - Frank, D. J.

PY - 1990/7

Y1 - 1990/7

N2 - We review work on heterojunction FETs (HFETs) fabricated from III-V compounds, with emphasis on the unique properties of such devices and their applicability to high-speed logic circuits. After discussing their general properties, including their uniquely high carrier mobility and fast switching speed, we discuss HFETs investigated at the IBM Thomas J. Watson Research Center, i.e., the semiconductor-insulator-semiconductor FET (SISFET) and quantum-well metal-insulator-semiconductor FET (QW-MISFET) - and their possible circuit applications. Finally, the opportunities for achieving a circuit performance level beyond that offered by the GaAs-(Al, Ga)As materials system are explored.

AB - We review work on heterojunction FETs (HFETs) fabricated from III-V compounds, with emphasis on the unique properties of such devices and their applicability to high-speed logic circuits. After discussing their general properties, including their uniquely high carrier mobility and fast switching speed, we discuss HFETs investigated at the IBM Thomas J. Watson Research Center, i.e., the semiconductor-insulator-semiconductor FET (SISFET) and quantum-well metal-insulator-semiconductor FET (QW-MISFET) - and their possible circuit applications. Finally, the opportunities for achieving a circuit performance level beyond that offered by the GaAs-(Al, Ga)As materials system are explored.

UR - http://www.scopus.com/inward/record.url?scp=0025458086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025458086&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0025458086

VL - 34

SP - 506

EP - 529

JO - IBM Journal of Research and Development

JF - IBM Journal of Research and Development

SN - 0018-8646

IS - 4

ER -