Abstract
Heterogeneous integration of technologically important materials, such as SiC/Si, GaN/Si, Ge/Si, Si/nano-Si/Si, SiC-on-insulator (SiCOI), and ZrO2/SiO2/Si, was successfully made by ultra-high vacuum (UHV) wafer bonding. A unique, UHV bonding unit, especially designed to control interface structure, chemistry, and crystallographic orientation within narrow limits, was used to produce homophase and heterophase planar interfaces. In-situ thin-film-deposition capability in conjunction with the wafer bonding offered even more flexibility for producing integrated artificial structures. Prebonding surface preparation was critically important for the formation of strong bonded interfaces. The substrate-surface morphology was examined by atomic-force microscopy (AFM) prior to bonding. In-situ Auger spectroscopy measurements of surface chemistry were invaluable predictors of bonding behaviors. Plasma processing very effectively cleaned the substrates, achieving a near-perfect interfacial bond at the atomic scale. The integrity of the bonded interfaces was studied in the light of their structural and chemical characteristics analyzed by high-resolution, analytical electron microscopy.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 849-854 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 32 |
| Issue number | 8 |
| State | Published - Aug 2003 |
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Keywords
- Heterogeneous integration
- Interface
- Transmission electron microscopy
- Wafer bonding
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
Cite this
Heterogeneous silicon integration by ultra-high vacuum wafer bonding. / Kim, M. J.; Carpenter, Ray.
In: Journal of Electronic Materials, Vol. 32, No. 8, 08.2003, p. 849-854.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Heterogeneous silicon integration by ultra-high vacuum wafer bonding
AU - Kim, M. J.
AU - Carpenter, Ray
PY - 2003/8
Y1 - 2003/8
N2 - Heterogeneous integration of technologically important materials, such as SiC/Si, GaN/Si, Ge/Si, Si/nano-Si/Si, SiC-on-insulator (SiCOI), and ZrO2/SiO2/Si, was successfully made by ultra-high vacuum (UHV) wafer bonding. A unique, UHV bonding unit, especially designed to control interface structure, chemistry, and crystallographic orientation within narrow limits, was used to produce homophase and heterophase planar interfaces. In-situ thin-film-deposition capability in conjunction with the wafer bonding offered even more flexibility for producing integrated artificial structures. Prebonding surface preparation was critically important for the formation of strong bonded interfaces. The substrate-surface morphology was examined by atomic-force microscopy (AFM) prior to bonding. In-situ Auger spectroscopy measurements of surface chemistry were invaluable predictors of bonding behaviors. Plasma processing very effectively cleaned the substrates, achieving a near-perfect interfacial bond at the atomic scale. The integrity of the bonded interfaces was studied in the light of their structural and chemical characteristics analyzed by high-resolution, analytical electron microscopy.
AB - Heterogeneous integration of technologically important materials, such as SiC/Si, GaN/Si, Ge/Si, Si/nano-Si/Si, SiC-on-insulator (SiCOI), and ZrO2/SiO2/Si, was successfully made by ultra-high vacuum (UHV) wafer bonding. A unique, UHV bonding unit, especially designed to control interface structure, chemistry, and crystallographic orientation within narrow limits, was used to produce homophase and heterophase planar interfaces. In-situ thin-film-deposition capability in conjunction with the wafer bonding offered even more flexibility for producing integrated artificial structures. Prebonding surface preparation was critically important for the formation of strong bonded interfaces. The substrate-surface morphology was examined by atomic-force microscopy (AFM) prior to bonding. In-situ Auger spectroscopy measurements of surface chemistry were invaluable predictors of bonding behaviors. Plasma processing very effectively cleaned the substrates, achieving a near-perfect interfacial bond at the atomic scale. The integrity of the bonded interfaces was studied in the light of their structural and chemical characteristics analyzed by high-resolution, analytical electron microscopy.
KW - Heterogeneous integration
KW - Interface
KW - Transmission electron microscopy
KW - Wafer bonding
UR - http://www.scopus.com/inward/record.url?scp=0041941109&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0041941109&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0041941109
VL - 32
SP - 849
EP - 854
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 8
ER -