Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications

Terry Alford, A. E. Bair, Z. Atzmon, L. M. Stout, S. G. Balster, D. K. Schroder, R. J. Roedel

Research output: Contribution to journal › Article

Abstract

Thin heteroepitaxial films of S1-x-yGexCy have been investigated for potential use in low-power electronic applications. Films were grown on (100) Si substrates using atmospheric pressure chemical vapor deposition at 625 and 700 °C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry and secondary ion mass spectrometry. The crystallinity of the films was very sensitive to the flow rate of C2H4 that served as the C source. S1-x-yGexCy films with up to 2.0 at.% C and 20 at.% Ge were epitaxial with good crystallinity. Current-voltage measurements were obtained from the electrical characterization of Si1-x-yGexCy Si heterojunction diodes. Stable layers and low diode turn-on voltage make the Si1-x-yGexCy Si structure an appropriate candidate for future low-power research.

Original languageEnglish (US)
Pages (from-to)632-636
Number of pages5
JournalThin Solid Films
Volume270
Issue number1-2
DOIs
StatePublished - Dec 1 1995

Fingerprint

crystallinity
Substrates
diodes
Diodes
Low power electronics
electrical measurement
secondary ion mass spectrometry
Voltage measurement
Rutherford backscattering spectroscopy
heterojunctions
Electric current measurement
backscattering
atmospheric pressure
Secondary ion mass spectrometry
flow velocity
Spectrometry
Atmospheric pressure
vapor deposition
Heterojunctions
Chemical vapor deposition

Keywords

  • Carbon
  • Chemical vapour deposition
  • Germanium
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

Alford, T., Bair, A. E., Atzmon, Z., Stout, L. M., Balster, S. G., Schroder, D. K., & Roedel, R. J. (1995). Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications. Thin Solid Films, 270(1-2), 632-636. https://doi.org/10.1016/0040-6090(95)06701-9

Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications. / Alford, Terry; Bair, A. E.; Atzmon, Z.; Stout, L. M.; Balster, S. G.; Schroder, D. K.; Roedel, R. J.

In: Thin Solid Films, Vol. 270, No. 1-2, 01.12.1995, p. 632-636.

Research output: Contribution to journal › Article

Alford, T, Bair, AE, Atzmon, Z, Stout, LM, Balster, SG, Schroder, DK & Roedel, RJ 1995, 'Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications', Thin Solid Films, vol. 270, no. 1-2, pp. 632-636. https://doi.org/10.1016/0040-6090(95)06701-9
Alford T, Bair AE, Atzmon Z, Stout LM, Balster SG, Schroder DK et al. Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications. Thin Solid Films. 1995 Dec 1;270(1-2):632-636. https://doi.org/10.1016/0040-6090(95)06701-9
Alford, Terry ; Bair, A. E. ; Atzmon, Z. ; Stout, L. M. ; Balster, S. G. ; Schroder, D. K. ; Roedel, R. J. / Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications. In: Thin Solid Films. 1995 ; Vol. 270, No. 1-2. pp. 632-636.
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AU - Bair, A. E.

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AU - Stout, L. M.

AU - Balster, S. G.

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AU - Roedel, R. J.

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N2 - Thin heteroepitaxial films of S1-x-yGexCy have been investigated for potential use in low-power electronic applications. Films were grown on (100) Si substrates using atmospheric pressure chemical vapor deposition at 625 and 700 °C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry and secondary ion mass spectrometry. The crystallinity of the films was very sensitive to the flow rate of C2H4 that served as the C source. S1-x-yGexCy films with up to 2.0 at.% C and 20 at.% Ge were epitaxial with good crystallinity. Current-voltage measurements were obtained from the electrical characterization of Si1-x-yGexCy Si heterojunction diodes. Stable layers and low diode turn-on voltage make the Si1-x-yGexCy Si structure an appropriate candidate for future low-power research.

AB - Thin heteroepitaxial films of S1-x-yGexCy have been investigated for potential use in low-power electronic applications. Films were grown on (100) Si substrates using atmospheric pressure chemical vapor deposition at 625 and 700 °C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry and secondary ion mass spectrometry. The crystallinity of the films was very sensitive to the flow rate of C2H4 that served as the C source. S1-x-yGexCy films with up to 2.0 at.% C and 20 at.% Ge were epitaxial with good crystallinity. Current-voltage measurements were obtained from the electrical characterization of Si1-x-yGexCy Si heterojunction diodes. Stable layers and low diode turn-on voltage make the Si1-x-yGexCy Si structure an appropriate candidate for future low-power research.

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