Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications

Terry Alford; A. E. Bair; Z. Atzmon; L. M. Stout; S. G. Balster; D. K. Schroder; R. J. Roedel

doi:10.1016/0040-6090(95)06701-9

Heteroepitaxial S_1-x-yGe_xC_y films on (100) Si substrates for future low-power applications

Terry Alford, A. E. Bair, Z. Atzmon, L. M. Stout, S. G. Balster, D. K. Schroder, R. J. Roedel

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Thin heteroepitaxial films of S_1-x-yGe_xC_y have been investigated for potential use in low-power electronic applications. Films were grown on (100) Si substrates using atmospheric pressure chemical vapor deposition at 625 and 700 °C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry and secondary ion mass spectrometry. The crystallinity of the films was very sensitive to the flow rate of C₂H₄ that served as the C source. S_1-x-yGe_xC_y films with up to 2.0 at.% C and 20 at.% Ge were epitaxial with good crystallinity. Current-voltage measurements were obtained from the electrical characterization of Si_1-x-yGe_xC_y Si heterojunction diodes. Stable layers and low diode turn-on voltage make the Si_1-x-yGe_xC_y Si structure an appropriate candidate for future low-power research.

Original language	English (US)
Pages (from-to)	632-636
Number of pages	5
Journal	Thin Solid Films
Volume	270
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(95)06701-9
State	Published - Dec 1 1995

Keywords

Carbon
Chemical vapour deposition
Germanium
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/0040-6090(95)06701-9

Cite this

@article{e1b90a53832e4f259a558bd7847645b6,

title = "Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications",

abstract = "Thin heteroepitaxial films of S1-x-yGexCy have been investigated for potential use in low-power electronic applications. Films were grown on (100) Si substrates using atmospheric pressure chemical vapor deposition at 625 and 700 °C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry and secondary ion mass spectrometry. The crystallinity of the films was very sensitive to the flow rate of C2H4 that served as the C source. S1-x-yGexCy films with up to 2.0 at.% C and 20 at.% Ge were epitaxial with good crystallinity. Current-voltage measurements were obtained from the electrical characterization of Si1-x-yGexCy Si heterojunction diodes. Stable layers and low diode turn-on voltage make the Si1-x-yGexCy Si structure an appropriate candidate for future low-power research.",

keywords = "Carbon, Chemical vapour deposition, Germanium, Silicon",

author = "Terry Alford and Bair, {A. E.} and Z. Atzmon and Stout, {L. M.} and Balster, {S. G.} and Schroder, {D. K.} and Roedel, {R. J.}",

note = "Funding Information: The authorsw ould like to acknowledgeM cD. Robinson and R. Westhoff at Lawrence SemiconductorR esearchL ab-oratory Inc., AZ, for providing SiGeC samples. We also acknowledgeJ ames W. Mayer of The Center for Solid State Science (ASU) for informative discussions.T his work was supportedb y AFOSR (ARPA) Award F49620-93-C-0018.",

year = "1995",

month = dec,

day = "1",

doi = "10.1016/0040-6090(95)06701-9",

language = "English (US)",

volume = "270",

pages = "632--636",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications

AU - Alford, Terry

AU - Bair, A. E.

AU - Atzmon, Z.

AU - Stout, L. M.

AU - Balster, S. G.

AU - Schroder, D. K.

AU - Roedel, R. J.

N1 - Funding Information: The authorsw ould like to acknowledgeM cD. Robinson and R. Westhoff at Lawrence SemiconductorR esearchL ab-oratory Inc., AZ, for providing SiGeC samples. We also acknowledgeJ ames W. Mayer of The Center for Solid State Science (ASU) for informative discussions.T his work was supportedb y AFOSR (ARPA) Award F49620-93-C-0018.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Thin heteroepitaxial films of S1-x-yGexCy have been investigated for potential use in low-power electronic applications. Films were grown on (100) Si substrates using atmospheric pressure chemical vapor deposition at 625 and 700 °C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry and secondary ion mass spectrometry. The crystallinity of the films was very sensitive to the flow rate of C2H4 that served as the C source. S1-x-yGexCy films with up to 2.0 at.% C and 20 at.% Ge were epitaxial with good crystallinity. Current-voltage measurements were obtained from the electrical characterization of Si1-x-yGexCy Si heterojunction diodes. Stable layers and low diode turn-on voltage make the Si1-x-yGexCy Si structure an appropriate candidate for future low-power research.

AB - Thin heteroepitaxial films of S1-x-yGexCy have been investigated for potential use in low-power electronic applications. Films were grown on (100) Si substrates using atmospheric pressure chemical vapor deposition at 625 and 700 °C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry and secondary ion mass spectrometry. The crystallinity of the films was very sensitive to the flow rate of C2H4 that served as the C source. S1-x-yGexCy films with up to 2.0 at.% C and 20 at.% Ge were epitaxial with good crystallinity. Current-voltage measurements were obtained from the electrical characterization of Si1-x-yGexCy Si heterojunction diodes. Stable layers and low diode turn-on voltage make the Si1-x-yGexCy Si structure an appropriate candidate for future low-power research.

KW - Carbon

KW - Chemical vapour deposition

KW - Germanium

KW - Silicon

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