Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition

Z. Atzmon, A. E. Bair, Terry Alford, D. Chandrasekhar, David Smith, J. W. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin heteroepitaxial films of Si 1-x-yGe xC y have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 550 and 700°C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry (ion channeling), secondary-ion-mass-spectrometry and cross-sectional transmission electron microscopy. SiGeC films with up to 2% C were grown at 700°C with good crystallinity and very few interfacial defects, while misfit dislocations at the SiGe/Si interface were observed for SiGe films grown under the same conditions. This difference indicates that the presence of carbon in the SiGe matrix increases the critical thickness of the grown layers. SiGeC thin films (>110 nm) with up to 3.5% C were grown at 550°C with good crystallinity. The crystallinity of the films grown at lower temperature (550°C) was less sensitive to the flow rate of the C source (C 2H 4), which enabled growth of single crystal SiGeC films with higher C content.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages117-122
Number of pages6
Volume399
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/27/9512/1/95

Fingerprint

Atmospheric pressure
Chemical vapor deposition
Rutherford backscattering spectroscopy
Secondary ion mass spectrometry
Dislocations (crystals)
Spectrometry
Carbon
Flow rate
Single crystals
Ions
Transmission electron microscopy
Thin films
Defects
Microstructure
Substrates
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Atzmon, Z., Bair, A. E., Alford, T., Chandrasekhar, D., Smith, D., & Mayer, J. W. (1996). Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition In Materials Research Society Symposium - Proceedings (Vol. 399, pp. 117-122). Materials Research Society.

Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition . / Atzmon, Z.; Bair, A. E.; Alford, Terry; Chandrasekhar, D.; Smith, David; Mayer, J. W.

Materials Research Society Symposium - Proceedings. Vol. 399 Materials Research Society, 1996. p. 117-122.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Atzmon, Z, Bair, AE, Alford, T, Chandrasekhar, D, Smith, D & Mayer, JW 1996, Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition in Materials Research Society Symposium - Proceedings. vol. 399, Materials Research Society, pp. 117-122, Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, 11/27/95.
Atzmon Z, Bair AE, Alford T, Chandrasekhar D, Smith D, Mayer JW. Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition In Materials Research Society Symposium - Proceedings. Vol. 399. Materials Research Society. 1996. p. 117-122
Atzmon, Z. ; Bair, A. E. ; Alford, Terry ; Chandrasekhar, D. ; Smith, David ; Mayer, J. W. / Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition Materials Research Society Symposium - Proceedings. Vol. 399 Materials Research Society, 1996. pp. 117-122
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abstract = "Thin heteroepitaxial films of Si 1-x-yGe xC y have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 550 and 700°C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry (ion channeling), secondary-ion-mass-spectrometry and cross-sectional transmission electron microscopy. SiGeC films with up to 2{\%} C were grown at 700°C with good crystallinity and very few interfacial defects, while misfit dislocations at the SiGe/Si interface were observed for SiGe films grown under the same conditions. This difference indicates that the presence of carbon in the SiGe matrix increases the critical thickness of the grown layers. SiGeC thin films (>110 nm) with up to 3.5{\%} C were grown at 550°C with good crystallinity. The crystallinity of the films grown at lower temperature (550°C) was less sensitive to the flow rate of the C source (C 2H 4), which enabled growth of single crystal SiGeC films with higher C content.",
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AU - Chandrasekhar, D.

AU - Smith, David

AU - Mayer, J. W.

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N2 - Thin heteroepitaxial films of Si 1-x-yGe xC y have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 550 and 700°C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry (ion channeling), secondary-ion-mass-spectrometry and cross-sectional transmission electron microscopy. SiGeC films with up to 2% C were grown at 700°C with good crystallinity and very few interfacial defects, while misfit dislocations at the SiGe/Si interface were observed for SiGe films grown under the same conditions. This difference indicates that the presence of carbon in the SiGe matrix increases the critical thickness of the grown layers. SiGeC thin films (>110 nm) with up to 3.5% C were grown at 550°C with good crystallinity. The crystallinity of the films grown at lower temperature (550°C) was less sensitive to the flow rate of the C source (C 2H 4), which enabled growth of single crystal SiGeC films with higher C content.

AB - Thin heteroepitaxial films of Si 1-x-yGe xC y have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 550 and 700°C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry (ion channeling), secondary-ion-mass-spectrometry and cross-sectional transmission electron microscopy. SiGeC films with up to 2% C were grown at 700°C with good crystallinity and very few interfacial defects, while misfit dislocations at the SiGe/Si interface were observed for SiGe films grown under the same conditions. This difference indicates that the presence of carbon in the SiGe matrix increases the critical thickness of the grown layers. SiGeC thin films (>110 nm) with up to 3.5% C were grown at 550°C with good crystallinity. The crystallinity of the films grown at lower temperature (550°C) was less sensitive to the flow rate of the C source (C 2H 4), which enabled growth of single crystal SiGeC films with higher C content.

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