Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates

T. P. Humphreys; C. J. Miner; J. B. Posthill; K. Das; M. K. Summerville; R. J. Nemanich; C. A. Sukow; N. R. Parikh

doi:10.1063/1.101303

Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates

T. P. Humphreys, C. J. Miner, J. B. Posthill, K. Das, M. K. Summerville, R. J. Nemanich, C. A. Sukow, N. R. Parikh

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Abstract

A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on silicon-on-sapphire and (101̄2) sapphire substrates has been made. Thermal strain is significantly reduced in these heteroepitaxial GaAs films as compared with GaAs on silicon; however, the (111) GaAs epitaxy on nominal (101̄2) sapphire contains double-position boundaries. Hall effect measurements and current-voltage characteristics from metal-semiconductor contacts show that GaAs grown on silicon-on-sapphire is superior to GaAs grown on (101̄2) sapphire under the experimental conditions employed.

Original language	English (US)
Pages (from-to)	1687-1689
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	17
DOIs	https://doi.org/10.1063/1.101303
State	Published - Dec 1 1989
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Humphreys, T. P., Miner, C. J., Posthill, J. B., Das, K., Summerville, M. K., Nemanich, R. J., Sukow, C. A., & Parikh, N. R. (1989). Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates. Applied Physics Letters, 54(17), 1687-1689. https://doi.org/10.1063/1.101303

@article{df2496ee3f6140919086cb0d21d9151e,

title = "Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates",

abstract = "A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on silicon-on-sapphire and (10{\=1}2) sapphire substrates has been made. Thermal strain is significantly reduced in these heteroepitaxial GaAs films as compared with GaAs on silicon; however, the (111) GaAs epitaxy on nominal (10{\=1}2) sapphire contains double-position boundaries. Hall effect measurements and current-voltage characteristics from metal-semiconductor contacts show that GaAs grown on silicon-on-sapphire is superior to GaAs grown on (10{\=1}2) sapphire under the experimental conditions employed.",

author = "Humphreys, {T. P.} and Miner, {C. J.} and Posthill, {J. B.} and K. Das and Summerville, {M. K.} and Nemanich, {R. J.} and Sukow, {C. A.} and Parikh, {N. R.}",

year = "1989",

month = dec,

day = "1",

doi = "10.1063/1.101303",

language = "English (US)",

volume = "54",

pages = "1687--1689",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates

AU - Humphreys, T. P.

AU - Miner, C. J.

AU - Posthill, J. B.

AU - Das, K.

AU - Summerville, M. K.

AU - Nemanich, R. J.

AU - Sukow, C. A.

AU - Parikh, N. R.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on silicon-on-sapphire and (101̄2) sapphire substrates has been made. Thermal strain is significantly reduced in these heteroepitaxial GaAs films as compared with GaAs on silicon; however, the (111) GaAs epitaxy on nominal (101̄2) sapphire contains double-position boundaries. Hall effect measurements and current-voltage characteristics from metal-semiconductor contacts show that GaAs grown on silicon-on-sapphire is superior to GaAs grown on (101̄2) sapphire under the experimental conditions employed.

AB - A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on silicon-on-sapphire and (101̄2) sapphire substrates has been made. Thermal strain is significantly reduced in these heteroepitaxial GaAs films as compared with GaAs on silicon; however, the (111) GaAs epitaxy on nominal (101̄2) sapphire contains double-position boundaries. Hall effect measurements and current-voltage characteristics from metal-semiconductor contacts show that GaAs grown on silicon-on-sapphire is superior to GaAs grown on (101̄2) sapphire under the experimental conditions employed.

UR - http://www.scopus.com/inward/record.url?scp=36549093993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549093993&partnerID=8YFLogxK

U2 - 10.1063/1.101303

DO - 10.1063/1.101303

M3 - Article

AN - SCOPUS:36549093993

VL - 54

SP - 1687

EP - 1689

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -

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10.1063/1.101303