Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates

T. P. Humphreys, C. J. Miner, J. B. Posthill, K. Das, M. K. Summerville, R. J. Nemanich, C. A. Sukow, N. R. Parikh

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Abstract

A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on silicon-on-sapphire and (101̄2) sapphire substrates has been made. Thermal strain is significantly reduced in these heteroepitaxial GaAs films as compared with GaAs on silicon; however, the (111) GaAs epitaxy on nominal (101̄2) sapphire contains double-position boundaries. Hall effect measurements and current-voltage characteristics from metal-semiconductor contacts show that GaAs grown on silicon-on-sapphire is superior to GaAs grown on (101̄2) sapphire under the experimental conditions employed.

Original languageEnglish (US)
Pages (from-to)1687-1689
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number17
DOIs
StatePublished - Dec 1 1989
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Humphreys, T. P., Miner, C. J., Posthill, J. B., Das, K., Summerville, M. K., Nemanich, R. J., Sukow, C. A., & Parikh, N. R. (1989). Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates. Applied Physics Letters, 54(17), 1687-1689. https://doi.org/10.1063/1.101303