Abstract
A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on silicon-on-sapphire and (101̄2) sapphire substrates has been made. Thermal strain is significantly reduced in these heteroepitaxial GaAs films as compared with GaAs on silicon; however, the (111) GaAs epitaxy on nominal (101̄2) sapphire contains double-position boundaries. Hall effect measurements and current-voltage characteristics from metal-semiconductor contacts show that GaAs grown on silicon-on-sapphire is superior to GaAs grown on (101̄2) sapphire under the experimental conditions employed.
Original language | English (US) |
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Pages (from-to) | 1687-1689 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 54 |
Issue number | 17 |
DOIs | |
State | Published - Dec 1 1989 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)