Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: Characterization by electron microscopy and optical methods

Engineering & Materials Science

• Excitons 100%
• Photoluminescence 92%
• Molecular beam epitaxy 87%
• Electron microscopy 73%
• Substrates 40%
• Transmission electron microscopy 38%
• Full width at half maximum 27%
• Twinning 24%
• Tensile strain 23%
• Thermal expansion 19%
• Defects 12%
• Temperature 7%

Chemical Compounds

• Optical Method 71%
• Exciton 57%
• Photoluminescence Spectrum 56%
• Shallow Acceptor 50%
• Electron Microscopy 49%
• Bound Exciton 47%
• Acceptor Level 46%
• Molecular Beam Epitaxy 40%
• Transmission Electron Microscopy 37%
• Thermal Expansion 30%
• Photoluminescence 21%
• Strain 19%

Physics & Astronomy

• electron microscopy 48%
• excitons 44%
• optics 40%
• photoluminescence 39%
• characterization 31%
• reflectance 26%
• transmission electron microscopy 24%
• sharpness 22%
• twinning 20%
• thermal expansion 16%
• molecular beam epitaxy 16%
• defects 10%