Hetero-emitter GaP/Si solar cells with high Si bulk lifetime

Chaomin Zhang; Nikolai N. Faleev; Laura Ding; Mathieu Boccard; Mariana Bertoni; Zachary Holman; Richard King; Christiana Honsberg

doi:10.1109/PVSC.2016.7749966

Hetero-emitter GaP/Si solar cells with high Si bulk lifetime

Chaomin Zhang, Nikolai N. Faleev, Laura Ding, Mathieu Boccard, Mariana Bertoni, Zachary Holman, Richard King, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

16 Scopus citations

Abstract

III-V/silicon solar cells which have an active silicon bottom solar cell are promising for multi-junction solar cell applications. In such solar cell structures, a high minority carrier lifetime in the bulk silicon substrate is necessary. Annealing silicon wafers at high temperature (> 500^oC) in the molecular beam epitaxy (MBE) high-vacuum chamber revealed significant lifetime degradation. In this work, we developed a practical method to maintain high Si bulk lifetime. SiN_x layer deposited on Si back side helps maintain millisecond level minority carrier lifetime. By this procedure high minority carrier lifetime in the Si substrate is preserved while high quality thin GaP layer is achieved. We demonstrate GaP as a hetero-emitter layer with high Si bulk lifetime in GaP/Si structure solar cell with 524mV open circuit voltage.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1950-1953
Number of pages	4
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749966
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

Gallium Phosphide
MBE growth
SiN
annealing
hetero-emitter
minority carrier lifetime
silicon substrate

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749966

Cite this

Zhang, C., Faleev, N. N., Ding, L., Boccard, M., Bertoni, M., Holman, Z., King, R., & Honsberg, C. (2016). Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 1950-1953). Article 7749966 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749966

Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. / Zhang, Chaomin; Faleev, Nikolai N.; Ding, Laura et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1950-1953 7749966 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, C, Faleev, NN, Ding, L, Boccard, M, Bertoni, M , Holman, Z , King, R & Honsberg, C 2016, Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749966, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 1950-1953, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749966

Zhang C, Faleev NN, Ding L, Boccard M, Bertoni M , Holman Z et al. Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1950-1953. 7749966. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749966

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title = "Hetero-emitter GaP/Si solar cells with high Si bulk lifetime",

abstract = "III-V/silicon solar cells which have an active silicon bottom solar cell are promising for multi-junction solar cell applications. In such solar cell structures, a high minority carrier lifetime in the bulk silicon substrate is necessary. Annealing silicon wafers at high temperature (> 500oC) in the molecular beam epitaxy (MBE) high-vacuum chamber revealed significant lifetime degradation. In this work, we developed a practical method to maintain high Si bulk lifetime. SiNx layer deposited on Si back side helps maintain millisecond level minority carrier lifetime. By this procedure high minority carrier lifetime in the Si substrate is preserved while high quality thin GaP layer is achieved. We demonstrate GaP as a hetero-emitter layer with high Si bulk lifetime in GaP/Si structure solar cell with 524mV open circuit voltage.",

keywords = "Gallium Phosphide, MBE growth, SiN, annealing, hetero-emitter, minority carrier lifetime, silicon substrate",

author = "Chaomin Zhang and Faleev, {Nikolai N.} and Laura Ding and Mathieu Boccard and Mariana Bertoni and Zachary Holman and Richard King and Christiana Honsberg",

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AU - Zhang, Chaomin

AU - Faleev, Nikolai N.

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AU - Bertoni, Mariana

AU - Holman, Zachary

AU - King, Richard

AU - Honsberg, Christiana

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N2 - III-V/silicon solar cells which have an active silicon bottom solar cell are promising for multi-junction solar cell applications. In such solar cell structures, a high minority carrier lifetime in the bulk silicon substrate is necessary. Annealing silicon wafers at high temperature (> 500oC) in the molecular beam epitaxy (MBE) high-vacuum chamber revealed significant lifetime degradation. In this work, we developed a practical method to maintain high Si bulk lifetime. SiNx layer deposited on Si back side helps maintain millisecond level minority carrier lifetime. By this procedure high minority carrier lifetime in the Si substrate is preserved while high quality thin GaP layer is achieved. We demonstrate GaP as a hetero-emitter layer with high Si bulk lifetime in GaP/Si structure solar cell with 524mV open circuit voltage.

AB - III-V/silicon solar cells which have an active silicon bottom solar cell are promising for multi-junction solar cell applications. In such solar cell structures, a high minority carrier lifetime in the bulk silicon substrate is necessary. Annealing silicon wafers at high temperature (> 500oC) in the molecular beam epitaxy (MBE) high-vacuum chamber revealed significant lifetime degradation. In this work, we developed a practical method to maintain high Si bulk lifetime. SiNx layer deposited on Si back side helps maintain millisecond level minority carrier lifetime. By this procedure high minority carrier lifetime in the Si substrate is preserved while high quality thin GaP layer is achieved. We demonstrate GaP as a hetero-emitter layer with high Si bulk lifetime in GaP/Si structure solar cell with 524mV open circuit voltage.

KW - Gallium Phosphide

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KW - SiN

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KW - hetero-emitter

KW - minority carrier lifetime

KW - silicon substrate

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ER -

Hetero-emitter GaP/Si solar cells with high Si bulk lifetime

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Keywords

ASJC Scopus subject areas

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