Abstract

III-V/silicon solar cells which have an active silicon bottom solar cell are promising for multi-junction solar cell applications. In such solar cell structures, a high minority carrier lifetime in the bulk silicon substrate is necessary. Annealing silicon wafers at high temperature (> 500oC) in the molecular beam epitaxy (MBE) high-vacuum chamber revealed significant lifetime degradation. In this work, we developed a practical method to maintain high Si bulk lifetime. SiNx layer deposited on Si back side helps maintain millisecond level minority carrier lifetime. By this procedure high minority carrier lifetime in the Si substrate is preserved while high quality thin GaP layer is achieved. We demonstrate GaP as a hetero-emitter layer with high Si bulk lifetime in GaP/Si structure solar cell with 524mV open circuit voltage.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1950-1953
Number of pages4
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Carrier lifetime
Solar cells
Silicon
Silicon solar cells
Open circuit voltage
Substrates
Silicon wafers
Molecular beam epitaxy
Vacuum
Annealing
Degradation
Temperature

Keywords

  • annealing
  • Gallium Phosphide
  • hetero-emitter
  • MBE growth
  • minority carrier lifetime
  • silicon substrate
  • SiN

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Zhang, C., Faleev, N. N., Ding, L., Boccard, M., Bertoni, M., Holman, Z., ... Honsberg, C. (2016). Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 1950-1953). [7749966] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749966

Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. / Zhang, Chaomin; Faleev, Nikolai N.; Ding, Laura; Boccard, Mathieu; Bertoni, Mariana; Holman, Zachary; King, Richard; Honsberg, Christiana.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 1950-1953 7749966.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, C, Faleev, NN, Ding, L, Boccard, M, Bertoni, M, Holman, Z, King, R & Honsberg, C 2016, Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749966, Institute of Electrical and Electronics Engineers Inc., pp. 1950-1953, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749966
Zhang C, Faleev NN, Ding L, Boccard M, Bertoni M, Holman Z et al. Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1950-1953. 7749966 https://doi.org/10.1109/PVSC.2016.7749966
Zhang, Chaomin ; Faleev, Nikolai N. ; Ding, Laura ; Boccard, Mathieu ; Bertoni, Mariana ; Holman, Zachary ; King, Richard ; Honsberg, Christiana. / Hetero-emitter GaP/Si solar cells with high Si bulk lifetime. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1950-1953
@inproceedings{9c29e9c0e0514ec1a1c08d9d5bd3d7d7,
title = "Hetero-emitter GaP/Si solar cells with high Si bulk lifetime",
abstract = "III-V/silicon solar cells which have an active silicon bottom solar cell are promising for multi-junction solar cell applications. In such solar cell structures, a high minority carrier lifetime in the bulk silicon substrate is necessary. Annealing silicon wafers at high temperature (> 500oC) in the molecular beam epitaxy (MBE) high-vacuum chamber revealed significant lifetime degradation. In this work, we developed a practical method to maintain high Si bulk lifetime. SiNx layer deposited on Si back side helps maintain millisecond level minority carrier lifetime. By this procedure high minority carrier lifetime in the Si substrate is preserved while high quality thin GaP layer is achieved. We demonstrate GaP as a hetero-emitter layer with high Si bulk lifetime in GaP/Si structure solar cell with 524mV open circuit voltage.",
keywords = "annealing, Gallium Phosphide, hetero-emitter, MBE growth, minority carrier lifetime, silicon substrate, SiN",
author = "Chaomin Zhang and Faleev, {Nikolai N.} and Laura Ding and Mathieu Boccard and Mariana Bertoni and Zachary Holman and Richard King and Christiana Honsberg",
year = "2016",
month = "11",
day = "18",
doi = "10.1109/PVSC.2016.7749966",
language = "English (US)",
volume = "2016-November",
pages = "1950--1953",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Hetero-emitter GaP/Si solar cells with high Si bulk lifetime

AU - Zhang, Chaomin

AU - Faleev, Nikolai N.

AU - Ding, Laura

AU - Boccard, Mathieu

AU - Bertoni, Mariana

AU - Holman, Zachary

AU - King, Richard

AU - Honsberg, Christiana

PY - 2016/11/18

Y1 - 2016/11/18

N2 - III-V/silicon solar cells which have an active silicon bottom solar cell are promising for multi-junction solar cell applications. In such solar cell structures, a high minority carrier lifetime in the bulk silicon substrate is necessary. Annealing silicon wafers at high temperature (> 500oC) in the molecular beam epitaxy (MBE) high-vacuum chamber revealed significant lifetime degradation. In this work, we developed a practical method to maintain high Si bulk lifetime. SiNx layer deposited on Si back side helps maintain millisecond level minority carrier lifetime. By this procedure high minority carrier lifetime in the Si substrate is preserved while high quality thin GaP layer is achieved. We demonstrate GaP as a hetero-emitter layer with high Si bulk lifetime in GaP/Si structure solar cell with 524mV open circuit voltage.

AB - III-V/silicon solar cells which have an active silicon bottom solar cell are promising for multi-junction solar cell applications. In such solar cell structures, a high minority carrier lifetime in the bulk silicon substrate is necessary. Annealing silicon wafers at high temperature (> 500oC) in the molecular beam epitaxy (MBE) high-vacuum chamber revealed significant lifetime degradation. In this work, we developed a practical method to maintain high Si bulk lifetime. SiNx layer deposited on Si back side helps maintain millisecond level minority carrier lifetime. By this procedure high minority carrier lifetime in the Si substrate is preserved while high quality thin GaP layer is achieved. We demonstrate GaP as a hetero-emitter layer with high Si bulk lifetime in GaP/Si structure solar cell with 524mV open circuit voltage.

KW - annealing

KW - Gallium Phosphide

KW - hetero-emitter

KW - MBE growth

KW - minority carrier lifetime

KW - silicon substrate

KW - SiN

UR - http://www.scopus.com/inward/record.url?scp=85003429846&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003429846&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749966

DO - 10.1109/PVSC.2016.7749966

M3 - Conference contribution

VL - 2016-November

SP - 1950

EP - 1953

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -