Hard x-ray photoemission study of near-Heusler FexSi 1-x alloys

A. X. Gray, J. Karel, J. Minár, C. Bordel, H. Ebert, J. Braun, S. Ueda, Y. Yamashita, L. Ouyang, David Smith, K. Kobayashi, F. Hellman, C. S. Fadley

Research output: Contribution to journalArticle

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Abstract

The structural and electronic properties of epitaxial and amorphous Fe xSi1-x alloys with x = 0.72 and 0.67 near the binary Heusler composition of x = 0.75 were determined using hard x-ray photoelectron spectroscopy (HXPS). By performing the measurements at a photon energy of 5950.3 eV, the bulk-sensitivity of the measurement is enhanced by a factor of 4-7 compared to conventional soft x-ray photoelectron spectroscopy at about 1000 keV. HXPS probes, on average, as far as 76 Å into the Fe xSi1-x samples. Via core-level spectra, it is found in the amorphous alloy that, in spite of the disordered structure that could lead to a broad distribution of chemical environments, the Si environment is mostly unique. Valence-band spectra reveal a clear distinction between the contributions of the two inequivalent Fe sites of the most highly ordered (x = 0.72, D03) epitaxial sample. The valence-band spectra are compared to results of fully relativistic coherent potential approximation calculations performed in the framework of the one-step model of photoemission, which reveal details of the atomic-orbital makeup of various features, and generally exhibit good agreement with experiment.

Original languageEnglish (US)
Article number195112
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number19
DOIs
StatePublished - May 9 2011

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Photoemission
Photoelectron spectroscopy
x ray spectroscopy
photoelectric emission
photoelectron spectroscopy
Valence bands
X rays
valence
x rays
Core levels
Amorphous alloys
Electronic properties
Structural properties
Photons
orbitals
probes
photons
Chemical analysis
approximation
electronics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Gray, A. X., Karel, J., Minár, J., Bordel, C., Ebert, H., Braun, J., ... Fadley, C. S. (2011). Hard x-ray photoemission study of near-Heusler FexSi 1-x alloys. Physical Review B - Condensed Matter and Materials Physics, 83(19), [195112]. https://doi.org/10.1103/PhysRevB.83.195112

Hard x-ray photoemission study of near-Heusler FexSi 1-x alloys. / Gray, A. X.; Karel, J.; Minár, J.; Bordel, C.; Ebert, H.; Braun, J.; Ueda, S.; Yamashita, Y.; Ouyang, L.; Smith, David; Kobayashi, K.; Hellman, F.; Fadley, C. S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 19, 195112, 09.05.2011.

Research output: Contribution to journalArticle

Gray, AX, Karel, J, Minár, J, Bordel, C, Ebert, H, Braun, J, Ueda, S, Yamashita, Y, Ouyang, L, Smith, D, Kobayashi, K, Hellman, F & Fadley, CS 2011, 'Hard x-ray photoemission study of near-Heusler FexSi 1-x alloys', Physical Review B - Condensed Matter and Materials Physics, vol. 83, no. 19, 195112. https://doi.org/10.1103/PhysRevB.83.195112
Gray, A. X. ; Karel, J. ; Minár, J. ; Bordel, C. ; Ebert, H. ; Braun, J. ; Ueda, S. ; Yamashita, Y. ; Ouyang, L. ; Smith, David ; Kobayashi, K. ; Hellman, F. ; Fadley, C. S. / Hard x-ray photoemission study of near-Heusler FexSi 1-x alloys. In: Physical Review B - Condensed Matter and Materials Physics. 2011 ; Vol. 83, No. 19.
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