Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

Engineering & Materials Science

• Hall mobility 100%
• Vapor phase epitaxy 87%
• Electron mobility 77%
• Carrier concentration 70%
• Hydrides 62%
• Boltzmann equation 25%
• Ground state 24%
• Iterative methods 17%
• Activation energy 17%
• Electrons 16%
• Impurities 15%
• Scattering 15%
• Semiconductor materials 14%
• Compensation and Redress 12%
• Temperature 6%

Chemical Compounds

• Vapor Phase Epitaxy 78%
• Electron Mobility 59%
• Hydride 42%
• Compound Mobility 37%
• Donor 33%
• Boltzmann Equation 27%
• Ground State 13%
• Semiconductor 12%
• Reaction Activation Energy 11%
• Electron Particle 8%

Physics & Astronomy

• vapor phase epitaxy 51%
• electron mobility 51%
• hydrides 50%
• templates 46%
• iterative solution 22%
• low concentrations 15%
• activation energy 12%
• conduction 11%
• ground state 10%
• impurities 10%
• scattering 8%
• electrons 6%
• temperature 4%