Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

D. Huang; F. Yun; M. A. Reshchikov; D. Wang; H. Morkoç; D. L. Rode; L. A. Farina; Ç Kurdak; Kong-Thon Tsen; S. S. Park; K. Y. Lee

doi:10.1016/S0038-1101(01)00088-0

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

D. Huang, F. Yun, M. A. Reshchikov, D. Wang, H. Morkoç, D. L. Rode, L. A. Farina, Ç Kurdak, Kong-Thon Tsen, S. S. Park, K. Y. Lee

Physics

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

Measured and calculated (without any adjustable material parameter) electron Hall mobility and carrier concentration in the range of 26.5-273 K are reported for a high-mobility free-standing bulk GaN grown by hydride vapor phase epitaxy. The peak electron mobility of 7386 cm²/Vs at 48 K and a value of 1425 cm²/Vs at 273 K were measured. An iterative solution of the Boltzmann equation was applied to calculate the mobility using the materials parameters either measured on the sample under study or recent values that are just becoming available with only the acceptor concentration being variable. Using only one donor and one conducting layer system, the donor and acceptor concentrations of 1.76 × 10¹⁶ and 2.4 × 10¹⁵ cm^-3, respectively, satisfy simultaneously the charge neutrality and electron mobility at all temperatures within the framework of the iterative method and measurements. The donor activation energy was determined to be 25.2 meV and is consistent with the value of about 30 meV for the hydrogenic ground state in a dilute semiconductor. The high electron mobility, low background impurity concentration, low compensation ratio, and negligible dislocation scattering demonstrate the high quality of the material studied.

Original language	English (US)
Pages (from-to)	711-715
Number of pages	5
Journal	Solid-State Electronics
Volume	45
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1101(01)00088-0
State	Published - May 2001

Keywords

GaN
HVPE
Hall factor
Mobility
Scattering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(01)00088-0

Cite this

@article{0805df2335954fb1a84f0a863b4d4cfb,

title = "Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy",

abstract = "Measured and calculated (without any adjustable material parameter) electron Hall mobility and carrier concentration in the range of 26.5-273 K are reported for a high-mobility free-standing bulk GaN grown by hydride vapor phase epitaxy. The peak electron mobility of 7386 cm2/Vs at 48 K and a value of 1425 cm2/Vs at 273 K were measured. An iterative solution of the Boltzmann equation was applied to calculate the mobility using the materials parameters either measured on the sample under study or recent values that are just becoming available with only the acceptor concentration being variable. Using only one donor and one conducting layer system, the donor and acceptor concentrations of 1.76 × 1016 and 2.4 × 1015 cm-3, respectively, satisfy simultaneously the charge neutrality and electron mobility at all temperatures within the framework of the iterative method and measurements. The donor activation energy was determined to be 25.2 meV and is consistent with the value of about 30 meV for the hydrogenic ground state in a dilute semiconductor. The high electron mobility, low background impurity concentration, low compensation ratio, and negligible dislocation scattering demonstrate the high quality of the material studied.",

keywords = "GaN, HVPE, Hall factor, Mobility, Scattering",

author = "D. Huang and F. Yun and Reshchikov, {M. A.} and D. Wang and H. Morko{\c c} and Rode, {D. L.} and Farina, {L. A.} and {\c C} Kurdak and Kong-Thon Tsen and Park, {S. S.} and Lee, {K. Y.}",

note = "Funding Information: The authors would like to thank T. King (VCU) for his tireless assistance throughout the laboratory. The VCU portion of this work was funded by grants from AFOSR (Dr. G.L. Witt), NSF (Drs. L. Hess and G. Pomrenke), and ONR (Drs. C.E.C. Wood and Y.S. Park). H.M. would like to thank Dr. W. Walukiewicz of Lawrence Berkeley National Laboratory for useful discussions regarding acoustic deformation potential. “The work at the UM is partially supported by a grant from AFSOR (Major D. Johnstone) and the Alfred P. Sloan Foundation.” Copyright: Copyright 2007 Elsevier B.V., All rights reserved.",

year = "2001",

month = may,

doi = "10.1016/S0038-1101(01)00088-0",

language = "English (US)",

volume = "45",

pages = "711--715",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "5",

}

TY - JOUR

T1 - Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

AU - Huang, D.

AU - Yun, F.

AU - Reshchikov, M. A.

AU - Wang, D.

AU - Morkoç, H.

AU - Rode, D. L.

AU - Farina, L. A.

AU - Kurdak, Ç

AU - Tsen, Kong-Thon

AU - Park, S. S.

AU - Lee, K. Y.

N1 - Funding Information: The authors would like to thank T. King (VCU) for his tireless assistance throughout the laboratory. The VCU portion of this work was funded by grants from AFOSR (Dr. G.L. Witt), NSF (Drs. L. Hess and G. Pomrenke), and ONR (Drs. C.E.C. Wood and Y.S. Park). H.M. would like to thank Dr. W. Walukiewicz of Lawrence Berkeley National Laboratory for useful discussions regarding acoustic deformation potential. “The work at the UM is partially supported by a grant from AFSOR (Major D. Johnstone) and the Alfred P. Sloan Foundation.” Copyright: Copyright 2007 Elsevier B.V., All rights reserved.

PY - 2001/5

Y1 - 2001/5

N2 - Measured and calculated (without any adjustable material parameter) electron Hall mobility and carrier concentration in the range of 26.5-273 K are reported for a high-mobility free-standing bulk GaN grown by hydride vapor phase epitaxy. The peak electron mobility of 7386 cm2/Vs at 48 K and a value of 1425 cm2/Vs at 273 K were measured. An iterative solution of the Boltzmann equation was applied to calculate the mobility using the materials parameters either measured on the sample under study or recent values that are just becoming available with only the acceptor concentration being variable. Using only one donor and one conducting layer system, the donor and acceptor concentrations of 1.76 × 1016 and 2.4 × 1015 cm-3, respectively, satisfy simultaneously the charge neutrality and electron mobility at all temperatures within the framework of the iterative method and measurements. The donor activation energy was determined to be 25.2 meV and is consistent with the value of about 30 meV for the hydrogenic ground state in a dilute semiconductor. The high electron mobility, low background impurity concentration, low compensation ratio, and negligible dislocation scattering demonstrate the high quality of the material studied.

AB - Measured and calculated (without any adjustable material parameter) electron Hall mobility and carrier concentration in the range of 26.5-273 K are reported for a high-mobility free-standing bulk GaN grown by hydride vapor phase epitaxy. The peak electron mobility of 7386 cm2/Vs at 48 K and a value of 1425 cm2/Vs at 273 K were measured. An iterative solution of the Boltzmann equation was applied to calculate the mobility using the materials parameters either measured on the sample under study or recent values that are just becoming available with only the acceptor concentration being variable. Using only one donor and one conducting layer system, the donor and acceptor concentrations of 1.76 × 1016 and 2.4 × 1015 cm-3, respectively, satisfy simultaneously the charge neutrality and electron mobility at all temperatures within the framework of the iterative method and measurements. The donor activation energy was determined to be 25.2 meV and is consistent with the value of about 30 meV for the hydrogenic ground state in a dilute semiconductor. The high electron mobility, low background impurity concentration, low compensation ratio, and negligible dislocation scattering demonstrate the high quality of the material studied.

KW - GaN

KW - HVPE

KW - Hall factor

KW - Mobility

KW - Scattering

UR - http://www.scopus.com/inward/record.url?scp=0035333216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035333216&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(01)00088-0

DO - 10.1016/S0038-1101(01)00088-0

M3 - Article

AN - SCOPUS:0035333216

SN - 0038-1101

VL - 45

SP - 711

EP - 715

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this