Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

Engineering & Materials Science

• Metallorganic chemical vapor deposition 100%
• Hall effect 86%
• Impurities 61%
• Valence bands 38%
• Excited states 35%
• Photoluminescence 34%
• Electronic properties 32%
• Epitaxial films 32%
• Germanium 28%
• Atmospheric pressure 23%
• Activation energy 22%
• Merging 20%
• Temperature 16%
• Carbon 16%

Chemical Compounds

• Hall Effect 91%
• Chemical Vapour Deposition 57%
• Arsine 40%
• Valence Band 35%
• Purity 32%
• Electronic Property 26%
• Excited State 25%
• Photoluminescence 24%
• Reaction Activation Energy 21%
• Donor 21%
• Pressure 18%
• Carbon Atom 14%
• Surface 10%

Physics & Astronomy

• metalorganic chemical vapor deposition 60%
• Hall effect 58%
• purity 54%
• impurities 25%
• germanium 11%
• atmospheric pressure 11%
• depletion 11%
• activation energy 9%
• valence 9%
• photoluminescence 8%
• carbon 8%
• estimates 7%
• electronics 6%
• excitation 6%
• temperature 3%