Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

M. H. Kim, S. S. Bose, B. J. Skromme, B. Lee, G. E. Stillman

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Variable temperature Hall effect and low temperature photoluminescence measurements have been performed on high purity p- and n-type GaAs grown at atmospheric pressure by metalorganic chemical vapor deposition. These high purity epitaxial GaAs layers were grown as a function of the arsine (AsH3) to trimethylgallium (TMG) ratio (V/III ratio). The accurate quantitative assessment of the electronic properties of the p-type layers was emphasized. Analysis of the material focussed on the variation of the concentration of the shallow impurities for different V/III ratios. Surface and interface depletion effects are included to accurately estimate the concentration of impurities. The model of the merging of the excited states of the acceptor with the valence band is used to include the dependence the activation energy of the impurity on the acceptor concentration as well as on acceptor species identity. The characteristic p- to n-type conversion with increasing V/III ratio was observed in these samples and the reason for the p- to n-type conversion is that the background acceptor concentration of carbon decreases and the germanium donor concentration increases as the V/III ratio is increased.

Original languageEnglish (US)
Pages (from-to)671-679
Number of pages9
JournalJournal of Electronic Materials
Volume20
Issue number9
DOIs
StatePublished - Sep 1 1991
Externally publishedYes

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Keywords

  • Hall effect
  • MOCVD
  • V/III ratio
  • p-type GaAs
  • photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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