Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

M. H. Kim, S. S. Bose, Brian Skromme, B. Lee, G. E. Stillman

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Variable temperature Hall effect and low temperature photoluminescence measurements have been performed on high purity p- and n-type GaAs grown at atmospheric pressure by metalorganic chemical vapor deposition. These high purity epitaxial GaAs layers were grown as a function of the arsine (AsH3) to trimethylgallium (TMG) ratio (V/III ratio). The accurate quantitative assessment of the electronic properties of the p-type layers was emphasized. Analysis of the material focussed on the variation of the concentration of the shallow impurities for different V/III ratios. Surface and interface depletion effects are included to accurately estimate the concentration of impurities. The model of the merging of the excited states of the acceptor with the valence band is used to include the dependence the activation energy of the impurity on the acceptor concentration as well as on acceptor species identity. The characteristic p- to n-type conversion with increasing V/III ratio was observed in these samples and the reason for the p- to n-type conversion is that the background acceptor concentration of carbon decreases and the germanium donor concentration increases as the V/III ratio is increased.

Original languageEnglish (US)
Pages (from-to)671-679
Number of pages9
JournalJournal of Electronic Materials
Volume20
Issue number9
DOIs
StatePublished - Sep 1991
Externally publishedYes

Fingerprint

Hall effect
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
purity
Impurities
Germanium
impurities
Epitaxial layers
Valence bands
Merging
Excited states
Electronic properties
Atmospheric pressure
Photoluminescence
Carbon
Activation energy
Temperature
germanium
atmospheric pressure
depletion

Keywords

  • Hall effect
  • MOCVD
  • p-type GaAs
  • photoluminescence
  • V/III ratio

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition. / Kim, M. H.; Bose, S. S.; Skromme, Brian; Lee, B.; Stillman, G. E.

In: Journal of Electronic Materials, Vol. 20, No. 9, 09.1991, p. 671-679.

Research output: Contribution to journalArticle

Kim, M. H. ; Bose, S. S. ; Skromme, Brian ; Lee, B. ; Stillman, G. E. / Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition. In: Journal of Electronic Materials. 1991 ; Vol. 20, No. 9. pp. 671-679.
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