H-induced platelet and crack formation in hydrogenated epitaxial Si/Si 0.98B 0.02/Si structures

Lin Shao, Yuan Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, Terry Alford, J. W. Mayer, Peng Chen, S. S. Lau

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Abstract

An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si Si0.98 B0.02 Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98 B0.02 layer. For hydrogenated Si containing a 130 nm thick Si0.98 B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98 B0.02 layer to 3 nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.

Original languageEnglish (US)
Article number021901
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number2
DOIs
StatePublished - Jan 24 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Shao, L., Lin, Y., Swadener, J. G., Lee, J. K., Jia, Q. X., Wang, Y. Q., Nastasi, M., Thompson, P. E., Theodore, N. D., Alford, T., Mayer, J. W., Chen, P., & Lau, S. S. (2006). H-induced platelet and crack formation in hydrogenated epitaxial Si/Si 0.98B 0.02/Si structures. Applied Physics Letters, 88(2), 1-3. [021901]. https://doi.org/10.1063/1.2163992