@article{cb1a9491848742ccac67a7a3c094d31f,
title = ">750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell",
abstract = "This paper presents experimental evidence that silicon solar cells can achieve >750 mV open circuit voltage at 1 Sun illumination providing very good surface passivation is present. 753 mV local open circuit voltage was measured on a 50 μm thick non-metalized silicon heterojunction solar cell. The paper also considers a recombination model at open circuit based on the recent Auger and radiative recombination parameterization and the measured surface saturation current density. The loss mechanisms at open circuit and several practical pathways to achieve >760 mV open circuit voltage in silicon heterojunction solar cells are discussed.",
author = "Stanislau Herasimenka and Dauksher, {William J.} and Stuart Bowden",
note = "Funding Information: This material is based upon work supported in part by the Engineering Research Center Program of the National Science Foundation, and the Office of Energy Efficiency, and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy. The authors are grateful for the assistance with ITO deposition that was provided by Kay Barror and Dirk Bottesch of the Flexible Display Center at ASU. We would also like to acknowledge Ron Sinton from Sinton Instruments for useful discussions and material support.",
year = "2013",
month = jul,
day = "29",
doi = "10.1063/1.4817723",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",
}