>750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell

Stanislau Herasimenka, William J. Dauksher, Stuart Bowden

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53 Scopus citations

Abstract

This paper presents experimental evidence that silicon solar cells can achieve >750 mV open circuit voltage at 1 Sun illumination providing very good surface passivation is present. 753 mV local open circuit voltage was measured on a 50 μm thick non-metalized silicon heterojunction solar cell. The paper also considers a recombination model at open circuit based on the recent Auger and radiative recombination parameterization and the measured surface saturation current density. The loss mechanisms at open circuit and several practical pathways to achieve >760 mV open circuit voltage in silicon heterojunction solar cells are discussed.

Original languageEnglish (US)
Article number053511
JournalApplied Physics Letters
Volume103
Issue number5
DOIs
StatePublished - Jul 29 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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