Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

Michael J. DiNezza, Xin Hao Zhao, Shi Liu, Alexander P. Kirk, Yong-Hang Zhang

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47 Citations (Scopus)

Abstract

CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

Original languageEnglish (US)
Article number193901
JournalApplied Physics Letters
Volume103
Issue number19
DOIs
StatePublished - Nov 4 2013

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molecular beam epitaxy
photoluminescence
aluminum gallium arsenides
solar cells
life (durability)

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy. / DiNezza, Michael J.; Zhao, Xin Hao; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 103, No. 19, 193901, 04.11.2013.

Research output: Contribution to journalArticle

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