TY - JOUR
T1 - Growth parameter enhancement for MoS2 thin films synthesized by pulsed laser deposition
AU - Serna, Martha I.
AU - Moreno, Salvador
AU - Higgins, Marissa
AU - Choi, Hyunjoo
AU - Minary-Jolandan, Majid
AU - Quevedo-Lopez, Manuel A.
N1 - Publisher Copyright:
Copyright © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2016/12/1
Y1 - 2016/12/1
N2 - Two-dimensional materials such as graphene and MoS2 have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS2 layered films on amorphous (SiO2) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∼700 °C) and laser energy density (>530 mJ /cm2) promotes crystalline MoS2 films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS2 films by using a laser ablation processes.
AB - Two-dimensional materials such as graphene and MoS2 have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS2 layered films on amorphous (SiO2) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∼700 °C) and laser energy density (>530 mJ /cm2) promotes crystalline MoS2 films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS2 films by using a laser ablation processes.
KW - molybdenum disulfide
KW - pulsed laser deposition
KW - transition metal dichalcogenides
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U2 - 10.1002/pssc.201600091
DO - 10.1002/pssc.201600091
M3 - Article
AN - SCOPUS:84992451766
SN - 1862-6351
VL - 13
SP - 848
EP - 854
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 10-12
ER -