Growth of Znx, Cd(1-x′) Se/ Znx Cdy Mg(1-x-y) Se-InP quantum cascade structures for emission in the 3-5 μm range

W. O. Charles, Yu Yao, K. J. Franz, Q. Zhang, A. Shen, C. Gmachl, M. C. Tamargo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The molecular beam epitaxial growth and electroluminescence (EL) properties of Zn0.48 Cd0.52 Se/ Zn0.24 Cd0.18 Mg0.58 Se quantum cascade (QC) structures are reported. The samples were composed of 30 repeats of a three-well active region. Cladding layers were inserted to isolate the core of the EL structure from the heavily doped contact region and to obtain optical confinement. Electroluminescence was observed in the 4-5 μm range. The observed narrowing of the electroluminescence linewidth was tentatively attributed, in part, to the incorporation of the ZnCdMgSe waveguide layers. A test sample consisting of multiple asymmetric coupled quantum well active regions separated by quaternary barrier layers was also investigated. The Fourier transform infrared (FTIR) absorption spectroscopy measurements suggest that QC structures with EL emission in the 3-4 μm range can be achieved with these materials.

Original languageEnglish (US)
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume28
Issue number3
DOIs
StatePublished - 2010
Externally publishedYes

Fingerprint

Electroluminescence
electroluminescence
cascades
Molecular beams
Infrared absorption
barrier layers
Absorption spectroscopy
Epitaxial growth
Linewidth
Semiconductor quantum wells
molecular beams
infrared absorption
Infrared spectroscopy
Fourier transforms
absorption spectroscopy
Waveguides
infrared spectroscopy
quantum wells
waveguides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Growth of Znx, Cd(1-x′) Se/ Znx Cdy Mg(1-x-y) Se-InP quantum cascade structures for emission in the 3-5 μm range. / Charles, W. O.; Yao, Yu; Franz, K. J.; Zhang, Q.; Shen, A.; Gmachl, C.; Tamargo, M. C.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 28, No. 3, 2010.

Research output: Contribution to journalArticle

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AU - Charles, W. O.

AU - Yao, Yu

AU - Franz, K. J.

AU - Zhang, Q.

AU - Shen, A.

AU - Gmachl, C.

AU - Tamargo, M. C.

PY - 2010

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AB - The molecular beam epitaxial growth and electroluminescence (EL) properties of Zn0.48 Cd0.52 Se/ Zn0.24 Cd0.18 Mg0.58 Se quantum cascade (QC) structures are reported. The samples were composed of 30 repeats of a three-well active region. Cladding layers were inserted to isolate the core of the EL structure from the heavily doped contact region and to obtain optical confinement. Electroluminescence was observed in the 4-5 μm range. The observed narrowing of the electroluminescence linewidth was tentatively attributed, in part, to the incorporation of the ZnCdMgSe waveguide layers. A test sample consisting of multiple asymmetric coupled quantum well active regions separated by quaternary barrier layers was also investigated. The Fourier transform infrared (FTIR) absorption spectroscopy measurements suggest that QC structures with EL emission in the 3-4 μm range can be achieved with these materials.

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