Growth of ZnSe on GaAs epitaxial layers in a dual chamber molecular beam epitaxy system

M. C. Tamargo, J. L. De Miguel, R. E. Nahory, B. J. Skromme

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

We have grown ZnSe epitaxial layers on GaAs bulk substrates and on GaAs epitaxial layers by molecular beam epitaxy (MBE). A dual chamber MBE system was used which enabled the growth of the GaAs/ZnSe heterostructure completely in-situ. Examination of the initial stages of growth using RHEED indicates a much improved interface when ZnSe is grown over a GaAs epitaxial layer.

Original languageEnglish (US)
Pages (from-to)115-116
Number of pages2
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume796
DOIs
StatePublished - Apr 20 1987
Externally publishedYes
EventGrowth of Compound Semiconductors 1987 - Bay Point, United States
Duration: Mar 23 1987Mar 27 1987

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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