Growth of straight silicon nanowires on amorphous substrates with uniform diameter, length, orientation, and location using nanopatterned host-mediated catalyst

Chao Wang, Patrick F. Murphy, Nan Yao, Kevin McIlwrath, Stephen Y. Chou

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report a new approach, termed "growth by nanopatterned host-medicated catalyst" (NHC growth), to solve nonuniformities of Si nanowires (NWs) grown on amorphous substrates. Rather than pure metal catalyst, the NHC uses a mixture of metal catalyst with the material to be grown (i.e., Si), nanopatterns them into desired locations and anneals them. The Si host ensures one catalyst-dot per-growth-site, prevents catalyst-dot break-up, and crystallizes catalyst-dot (hence orientating NWs). The growth results straight silicon NWs on SiO 2 with uniform length and diameter (4% deviation), predetermined locations, preferred orientation, one-wire per-growth-site, and high density; all are 10-100 times better than conventional growth.

Original languageEnglish (US)
Pages (from-to)5247-5251
Number of pages5
JournalNano Letters
Volume11
Issue number12
DOIs
StatePublished - Dec 14 2011
Externally publishedYes

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Silicon
Nanowires
nanowires
catalysts
Catalysts
silicon
Substrates
Metals
nonuniformity
metals
wire
Wire
deviation

Keywords

  • amorphous substrate
  • growth
  • guided growth
  • host mediation
  • nanoimprint lithography
  • nanopatterned catalyst
  • Si nanowire

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Growth of straight silicon nanowires on amorphous substrates with uniform diameter, length, orientation, and location using nanopatterned host-mediated catalyst. / Wang, Chao; Murphy, Patrick F.; Yao, Nan; McIlwrath, Kevin; Chou, Stephen Y.

In: Nano Letters, Vol. 11, No. 12, 14.12.2011, p. 5247-5251.

Research output: Contribution to journalArticle

@article{5cc4b7a767f540b19e57198b880eeb2e,
title = "Growth of straight silicon nanowires on amorphous substrates with uniform diameter, length, orientation, and location using nanopatterned host-mediated catalyst",
abstract = "We report a new approach, termed {"}growth by nanopatterned host-medicated catalyst{"} (NHC growth), to solve nonuniformities of Si nanowires (NWs) grown on amorphous substrates. Rather than pure metal catalyst, the NHC uses a mixture of metal catalyst with the material to be grown (i.e., Si), nanopatterns them into desired locations and anneals them. The Si host ensures one catalyst-dot per-growth-site, prevents catalyst-dot break-up, and crystallizes catalyst-dot (hence orientating NWs). The growth results straight silicon NWs on SiO 2 with uniform length and diameter (4{\%} deviation), predetermined locations, preferred orientation, one-wire per-growth-site, and high density; all are 10-100 times better than conventional growth.",
keywords = "amorphous substrate, growth, guided growth, host mediation, nanoimprint lithography, nanopatterned catalyst, Si nanowire",
author = "Chao Wang and Murphy, {Patrick F.} and Nan Yao and Kevin McIlwrath and Chou, {Stephen Y.}",
year = "2011",
month = "12",
day = "14",
doi = "10.1021/nl2026663",
language = "English (US)",
volume = "11",
pages = "5247--5251",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "12",

}

TY - JOUR

T1 - Growth of straight silicon nanowires on amorphous substrates with uniform diameter, length, orientation, and location using nanopatterned host-mediated catalyst

AU - Wang, Chao

AU - Murphy, Patrick F.

AU - Yao, Nan

AU - McIlwrath, Kevin

AU - Chou, Stephen Y.

PY - 2011/12/14

Y1 - 2011/12/14

N2 - We report a new approach, termed "growth by nanopatterned host-medicated catalyst" (NHC growth), to solve nonuniformities of Si nanowires (NWs) grown on amorphous substrates. Rather than pure metal catalyst, the NHC uses a mixture of metal catalyst with the material to be grown (i.e., Si), nanopatterns them into desired locations and anneals them. The Si host ensures one catalyst-dot per-growth-site, prevents catalyst-dot break-up, and crystallizes catalyst-dot (hence orientating NWs). The growth results straight silicon NWs on SiO 2 with uniform length and diameter (4% deviation), predetermined locations, preferred orientation, one-wire per-growth-site, and high density; all are 10-100 times better than conventional growth.

AB - We report a new approach, termed "growth by nanopatterned host-medicated catalyst" (NHC growth), to solve nonuniformities of Si nanowires (NWs) grown on amorphous substrates. Rather than pure metal catalyst, the NHC uses a mixture of metal catalyst with the material to be grown (i.e., Si), nanopatterns them into desired locations and anneals them. The Si host ensures one catalyst-dot per-growth-site, prevents catalyst-dot break-up, and crystallizes catalyst-dot (hence orientating NWs). The growth results straight silicon NWs on SiO 2 with uniform length and diameter (4% deviation), predetermined locations, preferred orientation, one-wire per-growth-site, and high density; all are 10-100 times better than conventional growth.

KW - amorphous substrate

KW - growth

KW - guided growth

KW - host mediation

KW - nanoimprint lithography

KW - nanopatterned catalyst

KW - Si nanowire

UR - http://www.scopus.com/inward/record.url?scp=83655192480&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83655192480&partnerID=8YFLogxK

U2 - 10.1021/nl2026663

DO - 10.1021/nl2026663

M3 - Article

VL - 11

SP - 5247

EP - 5251

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 12

ER -