Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

Jignesh Vanjaria; Arul Chakkaravarthi Arjunan; Thomas Salagaj; Gary S. Tompa; Haokai Yang; Todd Houghton; Hongbin Yu

doi:10.1149/2162-8777/abaeb2

Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

Jignesh Vanjaria, Arul Chakkaravarthi Arjunan, Thomas Salagaj, Gary S. Tompa, Haokai Yang, Todd Houghton, Hongbin Yu

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

SiGeSn is a promising group IV semiconducting alloy to advance the field of silicon photonics. The bandgap of the alloy can be tuned by varying its' Si and Sn concentrations for developing devices in the near infrared (NIR) range. The growth of the material using a cost-effective process is still challenging due to various obstacles. In this work, a simplified in-house assembled plasma enhanced chemical vapor deposition (PECVD) reactor was used to deposit SiGeSn films. Plasma allows for the use of commercially available precursors (GeH4, Si2H6 and SnCl4) while providing high dissociation and deposition growth rates. Polycrystalline films were deposited at susceptor temperatures in the range of 350 C-450 C to study the effect of process temperature on the Sn segregation and Sn incorporation in the films. Selective area growth (SAG) of SiGeSn films was also achieved by depositing films on patterned silicon substrates. The composition of the films was characterized by Rutherford Back Scattering while the structural and optical properties of the films were analyzed using X-ray diffraction and Raman spectroscopy. Selectively grown films were fabricated into basic test photodiodes and evaluated for electrical performance under NIR illumination.

Original language	English (US)
Article number	074001
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	7
DOIs	https://doi.org/10.1149/2162-8777/abaeb2
State	Published - Jan 9 2020

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2162-8777/abaeb2

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@article{3f9077fc7d4d414aa3c4dc1c21939de5,

title = "Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices",

abstract = "SiGeSn is a promising group IV semiconducting alloy to advance the field of silicon photonics. The bandgap of the alloy can be tuned by varying its' Si and Sn concentrations for developing devices in the near infrared (NIR) range. The growth of the material using a cost-effective process is still challenging due to various obstacles. In this work, a simplified in-house assembled plasma enhanced chemical vapor deposition (PECVD) reactor was used to deposit SiGeSn films. Plasma allows for the use of commercially available precursors (GeH4, Si2H6 and SnCl4) while providing high dissociation and deposition growth rates. Polycrystalline films were deposited at susceptor temperatures in the range of 350 C-450 C to study the effect of process temperature on the Sn segregation and Sn incorporation in the films. Selective area growth (SAG) of SiGeSn films was also achieved by depositing films on patterned silicon substrates. The composition of the films was characterized by Rutherford Back Scattering while the structural and optical properties of the films were analyzed using X-ray diffraction and Raman spectroscopy. Selectively grown films were fabricated into basic test photodiodes and evaluated for electrical performance under NIR illumination.",

author = "Jignesh Vanjaria and Arjunan, {Arul Chakkaravarthi} and Thomas Salagaj and Tompa, {Gary S.} and Haokai Yang and Todd Houghton and Hongbin Yu",

note = "Funding Information: This authors acknowledge that that the work reported here was funded by US -Department of Energy (Award #DOE-STTR DETable SC0015164), NASA (STTR Contract# 80NSSC18P2145.STTR 2018-I) and National Science Foundation (grant nos. 1624842, 1839485, 1933742). The authors gratefully acknowledge the Eyring Materials Center for the use of the Rutherford Back Scattering and High resolution X-ray diffraction facilities, and the Center for Solid State Electronics Research for the use of the electron microscopy and the Nanofab facilities at Arizona State University. Publisher Copyright: {\textcopyright} 2020 The Electrochemical Society ({"}ECS{"}). Published on behalf of ECS by IOP Publishing Limited.",

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doi = "10.1149/2162-8777/abaeb2",

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AU - Vanjaria, Jignesh

AU - Arjunan, Arul Chakkaravarthi

AU - Salagaj, Thomas

AU - Tompa, Gary S.

AU - Yang, Haokai

AU - Houghton, Todd

AU - Yu, Hongbin

N1 - Funding Information: This authors acknowledge that that the work reported here was funded by US -Department of Energy (Award #DOE-STTR DETable SC0015164), NASA (STTR Contract# 80NSSC18P2145.STTR 2018-I) and National Science Foundation (grant nos. 1624842, 1839485, 1933742). The authors gratefully acknowledge the Eyring Materials Center for the use of the Rutherford Back Scattering and High resolution X-ray diffraction facilities, and the Center for Solid State Electronics Research for the use of the electron microscopy and the Nanofab facilities at Arizona State University. Publisher Copyright: © 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

PY - 2020/1/9

Y1 - 2020/1/9

N2 - SiGeSn is a promising group IV semiconducting alloy to advance the field of silicon photonics. The bandgap of the alloy can be tuned by varying its' Si and Sn concentrations for developing devices in the near infrared (NIR) range. The growth of the material using a cost-effective process is still challenging due to various obstacles. In this work, a simplified in-house assembled plasma enhanced chemical vapor deposition (PECVD) reactor was used to deposit SiGeSn films. Plasma allows for the use of commercially available precursors (GeH4, Si2H6 and SnCl4) while providing high dissociation and deposition growth rates. Polycrystalline films were deposited at susceptor temperatures in the range of 350 C-450 C to study the effect of process temperature on the Sn segregation and Sn incorporation in the films. Selective area growth (SAG) of SiGeSn films was also achieved by depositing films on patterned silicon substrates. The composition of the films was characterized by Rutherford Back Scattering while the structural and optical properties of the films were analyzed using X-ray diffraction and Raman spectroscopy. Selectively grown films were fabricated into basic test photodiodes and evaluated for electrical performance under NIR illumination.

AB - SiGeSn is a promising group IV semiconducting alloy to advance the field of silicon photonics. The bandgap of the alloy can be tuned by varying its' Si and Sn concentrations for developing devices in the near infrared (NIR) range. The growth of the material using a cost-effective process is still challenging due to various obstacles. In this work, a simplified in-house assembled plasma enhanced chemical vapor deposition (PECVD) reactor was used to deposit SiGeSn films. Plasma allows for the use of commercially available precursors (GeH4, Si2H6 and SnCl4) while providing high dissociation and deposition growth rates. Polycrystalline films were deposited at susceptor temperatures in the range of 350 C-450 C to study the effect of process temperature on the Sn segregation and Sn incorporation in the films. Selective area growth (SAG) of SiGeSn films was also achieved by depositing films on patterned silicon substrates. The composition of the films was characterized by Rutherford Back Scattering while the structural and optical properties of the films were analyzed using X-ray diffraction and Raman spectroscopy. Selectively grown films were fabricated into basic test photodiodes and evaluated for electrical performance under NIR illumination.

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ER -

Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

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